1985`1994”N

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  1. K.Yamaguchi, K.Okamoto and T.Imai : g Selective Epitaxial Growth of GaAs by Metalorganic Chemical Vapor Deposition g, Jpn. J. Appl. Phys., Vol.24, No.12 (1985) pp.1666-1671.

  2. K.Okamoto and K.Yamaguchi : g Selectively Buried Epitaxial Growth of GaAs by Metalorganic Chemical Vapor Deposition g, Appl. Phys. Lett., Vol.48, No.13 (1986) pp.849-851.

  3. K.Okamoto, M.Furuta and K.Yamaguchi : g Lateral Growth on (110) GaAs Substrates by Metalorganic Chemical Vapor Deposition g, Jpn. J. Appl. Phys., Vol.27, No.3 (1988) pp.L437- L440.

  4. K.Okamoto, M.Furuta and K.Yamaguchi : g Zn and Si Doping in {110} GaAs Epilayers Grown by Metalorganic Chemical Vapor Deposition g, Jpn. J. Appl. Phys., Vol.27, No.11 (1988) pp.L2121- L2124.

  5. K.Yamaguchi and K.Okamoto : g Lateral Growth on {111}B GaAs Substrates by Metalorganic Chemical Vapor Deposition g, J. Cryst. Growth, Vol.94 (1989) pp.203-207.

  6. K.Yamaguchi and K.Okamoto : g Lateral Growth of GaAs over SiO2 Films Prepared on (111)B Substrates by Metalorganic Chemical Vapor Deposition g, Jpn. J. Appl. Phys., Vol.28, No.4 (1989) pp.685-689.

  7. K.Yamaguchi and K.Okamoto : g Atom Beam-Irradiation Effects on Selective Epitaxial Growth of GaAs by Metalorganic Chemical Vapor Deposition g, Jpn. J. Appl. Phys., Vol.28, No.9 (1989) pp.L1489-L1492.

  8. K.Okamoto, H.Mawatari, K.Yamaguchi and A.Noguchi : g Zinc-Doped GaAs Epilayers Grown by Atmospheric-Pressure MOCVD Using Diethylzinc g, J. Cryst. Growth, Vol.98 (1989) pp.630-636.

  9. K.Yamaguchi and K.Okamoto : g Selective Epitaxial Growth of AlGaAs by Atmospheric-Pressure MOCVD Using Diethylgalliumchloride and Diethylaluminumchloride g, Jpn. J. Appl. Phys., Vol.29, No.8 (1990) pp.1408-1414.

  10. K.Okamoto, H.Koizumi and K.Yamaguchi : g DX Centers in Si-Doped AlxGa1-xAs Grown by Metalorganic Chemical Vapor Deposition g, J. Appl. Phys., Vol.68, No.4 (1990) pp.1669-1673.

  11. K.Yamaguchi and K.Okamoto : g Analysis of Deposition Selectivity in Selective Epitaxy of GaAs by Metalorganic Chemical Vapor Deposition g, Jpn. J. Appl. Phys., Vol.29, No.11 (1990) pp.2351- 2357.

  12. K.Yamaguchi and K.Okamoto : g Selective Epitaxial Growth on (100) Vicinal GaAs Surfaces by Atmospheric-Pressure Metalorganic Chemical Vapor Deposition Using Diethylgalliumchloride g, Jpn. J. Appl. Phys., Vol.30, No.2B (1991) pp.L231-L234.

  13. K.Okamoto, H.Tosaka and K.Yamaguchi : g Profiling of Double-Crystal X-Ray Diffraction of InGaAs Epilayers Grown on GaAs g, Jpn. J. Appl. Phys., Vol.30, No.6 (1991) pp.1239-1242.

  14. K.Yamaguchi and K.Okamoto : g Fabrication of GaAs Fine Stripe Structures by Selective Metalorganic Chemical Vapor Deposition Using Diethylgalliumchloride g, Appl. Phys. Lett., Vol.59, No.27 (1991) pp.3580-3582.

  15. K.Yamaguchi and K.Okamoto : g (Invited) Selective Epitaxial Growth of AlGaAs by MOCVD Using Dialkylmetalchloride g, 2nd Int. Meeting on Advanced Processing and Characterization Technologies (APCT-2), Fabrication and Characterization of Semiconductor Optoelectronic Devices and Integrated Circuits (May 8-10, 1991) Florida [Proceedings, pp.17-20].

  16. K.Okamoto, O.Ito and K.Yamaguchi : g Metalorganic Chemical Vapor Deposition of GaAs on (111)B Substrates by Using Diethylgalliumchloride g, Jpn. J. Appl. Phys., Vol.31, No.7A (1992) pp.L820-L822.

  17. K.Yamaguchi, S.Kishida and K.Okamoto : g Doping Properties of GaAs Selective Epilayers Grown by Atmospheric-Pressure Metalorganic Chemical Vapor Deposition g, Jpn. J. Appl. Phys., Vol.31, No.10A (1992) pp.L1377-L1380.

  18. K.Yamaguchi, M.Ogasawara and K.Okamoto : g Surface-Diffusion Model in Selective Metalorganic Chemical Vapor Deposition ", J. Appl. Phys., Vol.72, No.12 (1992) pp.5919-5925.

  19. ŽRŒû_ˆêAŠÝ“c”ÉŽ÷A‰ª–{F‘¾˜Y: uƒNƒƒ‰ƒCƒhŒn—L‹@‹à‘®‚ð—p‚¢‚½‘I‘ðMOCVD–@‚É‚æ‚éAlGaAs/GaAsŒn”­Œõ‘fŽq‚Ìì»v, “d‹C’ÊM‘åŠw‹I—v@‘æ6Šª ‘æ1†i1993”N6ŒŽjpp.1-8.

  20. K.Yamaguchi and K.Okamoto : g Lateral Supply Mechanisms in Selective Metalorganic Chemical Vapor Deposition g, Jpn. J. Appl. Phys., Vol.32, No.4 (1993) pp.1523-1527.

  21. K.Yamaguchi and K.Okamoto : g Anisotropic Ridge Growth by Step-Flow-Mode Metalorganic Chemical Vapor Deposition Using Diethylgalliumchloride g, Jpn. J. Appl. Phys., Vol.32, No.11A (1993) pp.4885-4888.

  22. K.Yamaguchi and K.Okamoto : gRidge-Growth Mechanism in Selective MOCVDh, Extended Abstract of the 12th Symposium Record on Alloy Semiconductor Physics and Electronics, Izunagaoka, (1993. July) ‡Z-16, pp.435-440.

  23. ŽRŒû_ˆêA“’‹½¬”üFu‘–¸Œ^ƒgƒ“ƒlƒ‹Œ°”÷‹¾iSTMj‚ÌŽŽìv,“d‹C’ÊM‘åŠw‹I—v@‘æ7Šª ‘æ1†i1994”N6ŒŽjpp.7-14.

  24. ŽRŒû_ˆêA“’‹½¬”üFu‘–¸Œ^ƒgƒ“ƒlƒ‹Œ°”÷‹¾iSTMj‚ÌŽŽì [‡U]v, “d‹C’ÊM‘åŠw‹I—v@‘æ7Šª ‘æ2†i1994”N12ŒŽjpp.133-140.

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