‚PDŠwp˜_•¶(2026`1995)

–ß‚é
  1. R. Suzuki, K. Tsunoda and K. Yamaguchi: gThermal Degradation of the GaSb/AlOx Interface Associated with Surface Leakage in InAs/GaSb type-II Superlattice Infrared Photodetectors", J. Appl. Phys. 140, (2026) pp.124501 1-8.

  2. T. Kaizu, J. Acharya, R. Watanabe, N. Miyashita and K. Yamaguchi: gLateral Overgrowth of InAs Layer by Sb Introduction from InAs Nanowires on Si(111) Substrate", Jpn. J. Appl. Phys. 65, (2026) pp.08SP08 1-6.

  3. R. Kai, N. Miyashita, T. Kaizu and K. Yamaguchi: gSimulation of In-Plane Strong Electronic Coupling in InAs Ultrahigh-Density Quantum Dots", Jpn. J. Appl. Phys. 65, (2026) pp.012004 1-7.

  4. S. J. Oon, T. Ohyama, N. Miyashita and K. Yamaguchi: gAbnormal Photoluminescence Properties of InAs/InAsSb In-Plane Ultrahigh-Density Quantum Dots", Jpn. J. Appl. Phys. 63, (2024) pp.085501 1-8.

  5. Y. Nakazato, N. Miyashita and K. Yamaguchi: gResonant Tunneling Injection of Electrons Through Double Stacked GaAs/InAs Quantum Dots with Nanohole Electrode", Jpn. J. Appl. Phys. 62, (2023) pp.112005 1-6.

  6. R. Nakagawa, R. Watanabe, N. Miyashita and K. Yamaguchi: gHigh-Density and High-Uniformity InAs Quantum Nanowires on Si(111) Substrates", J. Appl. Phys. 134, (2023) pp.154302 1-7.

  7. S. Tatsugi, N. Miyashita, T. Sogabe and K. Yamaguchi: gDemonstration of In-Plane Miniband Formation in InAs/InAsSb Ultrahigh-Density Quantum Dots by Analysis of Temperature Dependence of Photoluminescence", Jpn. J. Appl. Phys. 61, (2022) pp.102009 1-7.

  8. H. Yoshida, K. Sakamoto, N. Miyashita, K. Yamaguchi, Q. Shen, Y. Okada and T. Sogabe: gUltrafast Inverse Design of Quantum Dot Optical Spectra via a Joint TD-DFT Learning Scheme and Deep Reinforcement Learning", AIP Advances 12, (2022) 115316.

  9. K. Uno, N. Iijima, N. Miyashita and K. Yamaguchi: gSelf-Formation of InAs/InGaAsSb type-II Superlattice Structures on InP Substrates by MBE and Their Application to Mid-Infrared LEDs", AIP Advances 12, (2022) 085301. pp.1-6.

  10. K. Shiba, R. Sugiyama, K. Yamaguchi and T. Sogabe:gQuantum Dot Phase Transition Simulation with Hybrid Quantum Annealing via Metropolis-Adjusted Stochastic Gradient Langevin Dynamics", Advances in Cond. Mat. Phys., (2022) Art. ID 9711407, pp.1-11.

  11. M. Tanaka, K. Banba, T. Sogabe and K. Yamaguchi: gInAs/GaAsSb In-Plane Ultrahigh-Density Quantum Dot Lasers", Appl. Phys. Express, 14, (2021) pp.124002 1-4.

  12. T. Sogabe, C. Hung, R. Tamaki, S. Tomic, K. Yamaguchi, N. Ekins-Daukes and Y. Okada:gExperimental Demonstration of Energy-Transfer Rachet Intermediate-Band Solar Cell", Communications Physics 4, (2021) 1-10.

  13. T. Toujyou, T. Konishi, M. Hirayama, K. Yamaguchi and S. Tsukamoto:gIntermittent Growth for InAs Quantum Dot on GaAs(001)h, J. Cryst. Growth 551, (2020) pp.125891 1-5.

  14. R. Suzuki, K. Terada, K. Sakamoto, T. Sogabe and K. Yamaguchi: gLow Sunlight Concentration Properties of InAs Ultrahigh-Density Quantum-Dot Solar Cellsh, Jpn. J. Appl. Phys. 58, (2019) pp.071004 1-7.

  15. A. Makaino, Y. Tanaka and K. Yamaguchi: gMolecular Beam Deposition of High-Density InAs Quantum Dots on SiOx Filmsh, Jpn. J. Appl. Phys. 58, (2019) pp.SDDF07 1-4.

  16. R. Sugiyama, S. Tatsugi, T. Sogabe and K. Yamaguchi: gOptical Transition and Carrier Relaxation in a Type-II InAs/GaAsSb Quantum Dot Layerh, Jpn. J. Appl. Phys. 58, (2019) pp.012004 1-5.

  17. A. Makaino, K. Sakamoto, T. Sogabe, S. Kobayashi and K. Yamaguchi: gSelf-Formation of InAs Quantum Dots on SiOx/Semiconductor Substrates by Molecular Beam Depositionh, Appl. Phys. Express 11, (2018) pp.085501 1-4.

  18. A. Sato, Y. Ikeda, K. Yamaguchi and V. Vohra:gStrongly Iridescent Hybrid Photonic Sensors Based on Self-Assembled Nanoparticles for Hazardous Solvent Detectionh, Nanomaterials 8, (2018) pp.169 1-10.

  19. N. Kakuda and K. Yamaguchi: gCoarsening Process of High-Density InAs Quantum Dots on Sb-Irradiated GaAsh, Jpn. J. Appl. Phys. 57, (2018) pp.045601 1-5.

  20. S. Oikawa, A. Makaino, T. Sogabe and K. Yamaguchi: gGrowth process and Photoluminescence Properties of In-Plane Ultrahigh-Density InAs Quantum Dots on InAsSb/GaAs(001)h, Phys. Status Solidi B 255, (2018) pp.1700307 1-5.

  21. T. Sogabe, Q. Shen and K. Yamaguchi:gRecent Progress on Quantum Dot Solar Cells: a reviewh, J. Photonics for Energy 6, (2016) pp.040901 1-27.

  22. K. Sameshima, T. Sano and K. Yamaguchi:gSelf-Formation of Ultrahigh-Density (1012 cm-2) InAs Quantum Dots on InAsSb/GaAs(001) and Their Photoluminescence Propertiesh, Appl. Phys. Express 9, (2016) pp.075501 1-4.

  23. H. Yamashita, N. Kawamoto, Y. Ogawa and K. Yamaguchi:gFabrication of GaAs/AlAs Micro-Pillar Cavities Including Low-Density InAs Quantum Dots and Their Photoluminescence Propertiesh, Jpn. J. Appl. Phys. 54, (2015) pp.06FH03 1-4.

  24. M. Uemura, J. Ohta, R. Yamaguchi, K. Yamaguchi and A. Tackeuchi:gObservation of Optical Anisotropy of Highly Uniform InAs Quantum Dotsh, J. Cryst. Growth 378, (2013) pp.463-465.

  25. Y. Osaka, H. Tanabe, K. Yamada and K. Yamaguchi: gWideband Luminescence of High-Density InAs Quantum Dots on GaAsSb/GaAs Layersh, J. Cryst. Growth, 378, (2013) pp.422-425.

  26. K. Sakamoto, Y. Kondo, K. Uchida and K. Yamaguchi: gQuantum-Dot Density Dependence of Power Conversion Efficiency of Intermediate-Band Solar Cellsh, J. Appl. Phys., 112, (2012) pp.124515 1-4.

  27. Y. Eguchi, M. Shiokawa, K. Sakamoto, and K. Yamaguchi: gIntermadeate Band Solar Cells Using In-Plane Ultrahigh-Density InAs/GaAsSb Quantum-Dot Sheetsh, Photovoltaic Specialists Conference, (2012) 38th IEEE, pp.000045-000047.

  28. E. Saputra, J. Ohta, N. Kakuda and K. Yamaguchi: gSelf-Formation of In-Plane Ultrahigh-Density InAs Quantum Dots on GaAsSb/GaAs(001)h, Appl. Phys. Express, 5, (2012) pp.125502 1-3.

  29. H. Fujita, K. Yamamoto, J. Ohta, Y. Eguchi and K. Yamaguchi: gIn-Plane Quantum-Dot Superlattices of InAs on GaAsSb/GaAs(001) for Intermediate Band Solar-Cellsh, Photovoltaic Specialists Conference, (2011) 37th IEEE, pp.2612-2614.

  30. N. Kakuda, T. Kaizu, M. Takahasi, S. Fujikawa, and K. Yamaguchi: gTime-Resolved X-ray Diffraction Measurements of High-Density InAs Quantum-Dots on Sb/GaAs Layers and the Suppression of Coalescence by Sb-Irradiated Growth Interruptionh, Jpn. J. Appl. Phys., 49, (2010) pp.095602 1-4.

  31. T. Inaji, J. Ohta, and K. Yamaguchi: gStacking Growth of In-Plane InAs Quantum-Dot Superlattices on GaAsSb / GaAs (001) for Solar Cell Applicationsh, Photovoltaic Specialists Conference, (2010) 35th IEEE, pp.1885-1888.

  32. N. Kakuda, T. Yoshida, and K. Yamaguchi: gSb-Mediated Growth of High-Density InAs Quantum Dots and GaAsSb Embedding Growth by MBE h, Appl. Surf. Sci., 254, (2008) pp.8050-8053.

  33. S. Tonomura, and K. Yamaguchi: g Uniform Formation of High-Density InAs Quantum Dots by InGaAs Capping Growthh, J. Appl. Phys., 104, (2008) pp.054909-1-4.

  34. T. Kaizu, M. Takahasi, K. Yamaguchi, and J. Mizuki: gIn-situ Determination of Sb Distribution in Sb/GaAs(001) Layer for High-density InAs Quantum Dot Growthh, J. Cryst. Growth, 310, (2008) pp.3436-3439.

  35. K. Kusunoki, N. Tsukiji, T. Umi, A. Tackeuchi, and K. Yamaguchi: gGeneration of Highly Circularly Polarized Light from Uniform InAs/GaAs Quantum Dotsh, Physica Status Sol.(C), 5, (2008) pp.378-381.

  36. N. Kakuda, S. Tsukamoto, A. Ishii, K. Fujiwara, T. Ebisuzaki, K. Yamaguchi, and Y. Arakawa: g Surface Reconstructions on Sb-Irradiated GaAs(001) Formed by Molecular Beam Epitaxyh, Microelectron. J., 38, (2007) pp.620-624.

  37. T. Kanto and K. Yamaguchi: gIn-Plane Self-Arrangement of High-density InAs Quantum Dots on GaAsSb/GaAs(001) by Molecular Beam Epitaxy h, J. Appl. Phys., 101, No.9 (2007) pp.094901 1-4.

  38. N. Tsukiji and K. Yamaguchi: gClosely Stacking Growth of Highly Uniform InAs Quantum Dots on Self-Formed GaAs Nanoholesh, J. Cryst. Growth, 301-302, (2007) pp.849-852.

  39. T. Kaizu, M. Takahashi, K. Yamaguchi and J. Mizuki: gModification of InAs Quantum Dot Structure During Annealingh, J. Cryst. Growth, 301-302, (2007) pp.248-251.

  40. A. Ishii, K. Fujiwara, S. Tukamoto, N. Kakuda, K. Yamaguchi and Y. Arakawa: gStructure of GaSb/GaAs(001) Surface Using the First Principles Caluculationh, J. Cryst. Growth, 301-302, (2007) pp.880-883.

  41. K. Matsuda, S. V. Nair, H. E. Ruda, Y. Sugimoto, T. Saiki and K. Yamaguchi: gTwo-Exciton State in GaSb/GaAs Type-II Quantum Dots Studied using Near-Field Photoluminescence Spectroscopyh, Appl. Phys. Lett., Vol.90, No.1 (2007) pp.013101-1`013101-3.

  42. A. Tackeuchi, T. Kuroda, K. Yamaguchi, Y. Nakata, N. Yokoyama and T. Takagahara: gSpin Relaxation and Antiferromagnetic Coupling in Semiconductor Quantum Dotsh, Physica E, Vol.32, (2006) pp.354-358.

  43. M. Kuwahara, T. Nakanishi, S. Okumi, M. Yamamoto, M. Miyamaoto, N. Yamamoto, K. Yasui, T. Morino, R. Sakai, K. Tamagaki and K. Yamaguchi: gField Emission of Spin-Polarized Electrons Extracted from Photoexcited GaAs Tiph, Jpn. J. Appl. Phys., Vol.45, No.8B, (2006) pp.6245-6249.

  44. M. Ohta, T. Kanto and K. Yamaguchi: g Self-formation of High-Density and High-Uniformity InAs Quantum Dots on Sb/GaAs Layers by Molecular Beam Epitaxyh, Jpn. J. Appl. Phys., Vol.45, No.4B, (2006) pp.3427-3429.

  45. T. Kanto and K. Yamaguchi: gSelf-Assembled InAs Quantum-Dot Chains on Self-Formed GaAs Mesa-Stripes by Molecular Beam Epitaxyh, Jpn. J. Appl. Phys., Vol.44, No.10, (2005) pp.7690-7693.

  46. T. Nakai and K. Yamaguchi: gAnalysis of Sb-As Surface Exchange Reaction in Molecular Beam Epitaxy of GaSb/GaAs Quantum Wellsh, Jpn. J. Appl. Phys., Vol.44, No.6A (2005) pp.3803-3807.

  47. T. Satoh and K. Yamaguchi: gControl of Self-Formed GaAs Nanoholes Combined with Embedded InAs Quantum Dotsh, Jpn. J. Appl. Phys., Vol.44, No.4B (2005) pp.2672-2675.

  48. K. Yamaguchi and T. Kanto: gSelf-assembled InAs Quantum Dots on GaSb/GaAs(001) Layers by Molecular Beam Epitaxy", J. Cryst. Growth, Vol.275 (2005) pp.e2269-e2273.

  49. Y. Kobayashi and K. Yamaguchi: gControl of Photoluminescence Wavelength from Uniform InAs Qunatum Dots by Annealing", Appl. Surf. Sci., Vol.244 (2005) pp.88-91.

  50. T. Miura, T. Nakai and K. Yamaguchi: gAtomically controlled GaSb-termination of GaAs surface and its properties", Appl. Surf. Sci., Vol.237 (2004) pp.242-245.

  51. T.Nakai, S.Iwasaki and K.Yamaguchi : gControl of GaSb/GaAs Nanostructures by Molecular Beam Epitaxy", Jpn. J. Appl. Phys., Vol.43, No.4B (2004) pp.2122-2124.

  52. A. Takeuchi, R. Ohtsubo, K. Yamaguchi, M. Murayama, T. Kitamura, T. Kuroda and T. Takagahara: gSpin Relaxation Dynamics in Highly Uniform InAs Quantum Dotsh, Appl. Phys. Lett., Vol.84 (2004) pp.3576-3578.

  53. Y. Suzuki, T. Kaizu and K. Yamaguchi: gControlled Stacking Growth of Uniform InAs Quantum Dots by Molecular Beam Epitaxyh, Physica E, Vol.21/2-4 (2004) 555-559.

  54. K.Yamaguchi, T.Kaizu, T.Kanto and Y.Suzuki : gSelf-Formation of Uniform InAs Quantum Dots and Quantum-Dot Chains", Trans. MRS-J, Vol.29, No.1 (2004) 117-121.

  55. S. Iwasaki, T. Nakai and K. Yamaguchi: gSelf-Assembled GaAs/GaSb Quantum Dots by Molecular Beam Epitaxy", Trans. MRS-J, Vol.29, No.1 (2004) 127-129.

  56. T. Kaizu and K. Yamaguchi: gFacet Formation of Uniform InAs Quantum Dots by Molecular Beam Epitaxy", Jpn. J. Appl. Phys., Vol.42, No.6B (2003) pp.4166-4168.

  57. S. Iwasaki and K. Yamaguchi: gShape Transition of InAs from 2-Dimensional Islands and 3-Dimensional Dots by Annealingh, Appl. Surf. Sci., Vol.216 (2003) pp.407-412.

  58. T. Kaizu and K. Yamaguchi: gUniform Formation of Two-dimensional and Three-dimensional InAs Islands on GaAs by Molecular Beam Epitaxy", Jpn. J. Appl. Phys., Vol.42, No. 4A (2003) pp.1705-1708.

  59. T. Kitamura, R. Ohtsubo, M. Murayama, T. Kuroda, K. Yamaguchi and A. Tackeuchi: g Direct Observation of Phonon Relaxation Bottleneck in InAs Quantum Dots of High-Uniformity", Phys. Status Sol. (c) Vol.0, No.4 (2003) pp.1165-1168.

  60. M. Murayama, R. Ohtsubo, T. Kitamura, T. Kuroda, K. Yamaguchi and A. Tackeuchi: "Observation of Spin Pauli Blocking in InAs High-Uniform Quantum Dots", Phys. Status Sol. (c) Vol.0, No.4 (2003) pp.1145-1148.

  61. R. Ohtsubo and K. Yamaguchi: gHigh Quality InAs Quantum Dots Covered by InGaAs/GaAs Hetero-Capping Layerh, Phys. Status Sol. (c) Vol.0, No.3 (2003) pp.939-943.

  62. Y. Saito, R. Otsubo and K. Yamaguchi: gSize Ordering Effects of InAs Quantum Dots During a GaAs Capping Growth", Inst. Phys. Conf. Ser.(2002) No.170,Chap.7, pp.531-535.

  63. K. Yamaguchi, K. Kawaguchi and T. Kanto: gOne-Dimensional Quantum-Dot Chains of InAs Grown on Strain-Controlled GaAs/InGaAs Buffer Layer by Molecular Beam Epitaxyh, Jpn. J. Appl. Phys., Vol.41, No.9AB (2002) pp.L996 - L998.

  64. K. Yamaguchi, T. Kaizu, K. Yujobo and Y. Saito: g Uniform Formation Process of Self-Organized InAs Quantum Dots", J. Cryst. Growth, Vol.237-239 (2002) pp.1301-1306.

  65. K. Yamaguchi, Y. Saito and R. Otsubo: gSize-Shrinkage Effects of InAs Quantum Dots During the Growth of GaAs Capping Layer", Appl. Surf. Sci., Vol.190 (2002) pp.212-217.

  66. T. Miura and K. Yamaguchi: gSpin-Polarized Scanning Tunneling Microscopy Using Optically Pumped GaAs Tips", Jpn. J. Appl. Phys., Vol.41, No.6B (2002) pp.4382-4384.

  67. T. Kaizu and K. Yamaguchi: gSelf Size-Limiting Process of InAs Quantum Dots Grown by Molecular Beam Epitaxy", Jpn. J. Appl. Phys., Vol.40, No.3A (2001) pp.1885-1887.

  68. K. Yamaguchi, Y. Yasuda, A. Kovacs and P. B. Barna: gAnisotropic Surface Segregation of Indium Atoms in Molecular Beam Epitaxy of InGaAs/GaAs Quantum Wells", J. Appl. Phys., Vol.89, No.1 (2001) pp.217-220.

  69. R. Shinohara, K. Yamaguchi, H. Hirota, Y. Suzuki, T. Manago, H. Akinaga, T. Kuroda and F. Minami: gLifetime and Spin Relaxation Time Measurements of Micro-fabricated GaAs Tips", Jpn. J. Appl. Phys., Vol.39, No.12B (2000) pp.7093-7096.

  70. K. Yamaguchi, K. Yujobo and T. Kaizu: gStranski-Krastanov Growth of InAs Quantum Dots with Narrow Size Distribution", Jpn. J. Appl. Phys., Vol.39, No.12A (2000) pp.L1245-L1248.

  71. ŽÂŒ´—ºˆê, ŽRŒû_ˆê: g‰~•ÎŒõ—ã‹NGaAsƒ}ƒCƒNƒ’Tj‚̃Xƒsƒ“•Î‹Éƒgƒ“ƒlƒ‹“dŽqŒ¹‚ւ̉ž—ph, “dŽqî•ñ’ÊMŠw‰ï˜_•¶Ž C-‡U, Vol.J83-C, No.9 (2000) pp.835-841.

  72. K. Yamaguchi, T. Hiraike and K. Kawaguchi: gOne-Dimensional Alignment of InAs Dots on Strain-Controlled InGaAs Layers by Selective-Area Molecular-Beam Epitaxy", Appl. Surf. Sci., Vol.162-163 (2000) pp.590-594.

  73. K.Yamaguchi, R.Shinohara and M.Hashimoto : g[Invited] Spin-Polarized Scanning Tunneling Microscope Using Optically Pumped GaAs Microtips", Functional Materials, Vol.6 No.3 (1999) pp.575-579.

  74. Y. Suzuki, W. Nabhan, R. Shinohara, K. Yamaguchi and T. Katayama:g[Invited] Spin-Sensitive Scanning Tunneling Microscope Using GaAs Optically Pumped Tips", J. Magnetism and Magnetic Materials, Multilayers, Vol.198-199 (1999) pp.540-544.

  75. W. Nabhan, Y. Suzuki, R. Shinohara, K. Yamaguchi and E. Tamura: gEffect of Dichroism in the GaAs-Tip-Based Spin Polarized STM", Appl. Surf. Sci., Vol.144-145 (1999) pp.570-574.

  76. R. Shinohara, K. Yamaguchi, Y. Suzuki and W. Nabhan: gFabrication of GaAs Microtips and Their Application to Spin-Polarized Scanning Tunneling Microscope", Jpn. J. Appl. Phys., Vol.37, No.12B (1998) pp.7151-7154.

  77. K. Yamaguchi, T. Hiraike and F. Hiwatashi: gSelective Self-Organization of InAs Islands on InGaAs/GaAs Buffer Layers", J. Surf. Analysis, Vol.4, No.2 (1998) pp.242-247.

  78. F. Hiwatashi and K. Yamaguchi: gSelective Growth of Self-Organizing InAs Quantum Dots on Strained InGaAs Surfaces", Appl. Surf. Sci., Vol.130-132 (1998) pp.737-741.

  79. K. Yamaguchi, E. Waki and H. HasegawaF "Selective Self-Formation of InAs Quantum Dots on Strained InGaAs Layers by Molecular Beam Epitaxy", Jpn. J. Appl. Phys., Vol.36, No.7A (1997) pp.L871-L873.

  80. K. Yamaguchi, T. Okada and F. Hiwatashi: gAnalysis of Indium Surface Segregation in Molecular Beam Epitaxy of InGaAs/GaAs Quantum Wells", Appl. Surf. Sci., Vol.117-118 (1997) pp.700-704.

  81. K. Yamaguchi and S. Tada: gFabrication of GaAs Microtips for Scanning Tunneling Microscopy by Wet Etching", J. Electrochem. Soc., Vol.143, No.8 (1996) pp.2616-2619.

  82. K. Yamaguchi, K. Okamoto and S. Yugo: gScanning Tunneling Microscope with Gallium Arsenide Microtip Fabricated by Selective Epitaxial Growth", J. Appl. Phys., Vol.77, No.11 (1995) pp.6061-6063.