‚QDInternational Conferences (2013`1995)

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  1. M. Shiokawa, K. Sakamoto and K. Yamaguchi : gLong Carrier Lifetime in Ultrahigh-Density InAs Quantum-Dot Sheet of Intermediate Band Solar Cellsh, 39th IEEE Photovoltaic Specialists Conference, (June 16-21, 2013), Tampa, Florida, B21-101.

  2. T. Sano, E. Saputra and K. Yamaguchi : gSelf-Formation of Unltrahigh Density InAs Quantum Dots on InAsSb/GaAs Layersh, The 40th Int. Symposium on Compound Semiconductors (ISCS2013), (May 19-23), Kobe, WeB1_3 .

  3. Y. Takahashi, N. Kawamoto, H. Yamashita and K. Yamaguchi : g1.5-ƒÊm Surface Emission of InAs Quantum Dots with GaAs-Nanohole Capping Layersh, The 40th Int. Symposium on Compound Semiconductors (ISCS2013), (May 19-23), Kobe, MoPC_05_07 .

  4. M. Shiokawa, T. Sano, K. Uchida, K. Sakamoto and K. Yamaguchi : gSelf-Formation of In-Plane Ultrahigh-Density InAs Quantum Dots for Intermediate-Band Solar Cellsh, The 5th International Symposium on Innovative Solar Cells, (Jan. 21-22, 2013), Tsukuba, 15.

  5. K. Yamaguchi : g(Invited) Self-Formation of In-Plane Ultrahigh Density InAs Quantum Dots and Solar Cell Applicationsh, The 4th Int. Workshop on Quantum Nanostructure Solar Cells, (Dec. 04-05, 2012), Kobe.

  6. E. Saputra, T. Sano, J. Ohta and K. Yamaguchi : gSelf-Formation of Ultrahigh Density InAs Quantum Dots on GaAs(001) Substrates by Sb-Mediated MBE Growthh, The 17th International Conference on Molecular Beam Epitaxy (MBE 2012), (Sep. 23-28, 2012) Nara, TuP-39, 170.

  7. Y. Osaka, H. Tanabe, K. Yamada and K. Yamaguchi : gWideband Luminescence from High-Density InAs QDs on GaAsSb/Gaas Layersh, The 17th International Conference on Molecular Beam Epitaxy (MBE 2012), (Sep. 23-28, 2012) Nara, Th-57, 311.

  8. Y. Eguchi, M. Shiokawa, K. Sakamoto and K. Yamaguchi : gIntermediate-Band Solar Cells Using In-Plane Ultrahigh Density InAs/GaAsSb Quantum Dot Sheetsh, 38th IEEE Photovoltaic Specialists Conference, (June 3-8, 2012) Austin, Texas, B13-20.

  9. K. Yamaguchi : g(Invited) Self-Formation of In-Plane Ultrahigh Density InAs Quantum Dots and Solar Cell Applicationsh, 2012 Villa Conference on Energy, Materials, and Nanotechnology (EMN 2012, Interaction Among Nanostructures), (April 16-20, 2012), Orland, A40, 89-90.

  10. Y.Eguchi, H.Fujita, J.Ohta, M.Shiokawa, K.Samoto and K.Yamaguchi : gSolar cell applications of in-plane ultrahigh density InAs/GaAsSb quantum dotsh,4th International Symposium on Innovative Solar Cells, (March 5-6, 2012), Tokyo, Japan, T-15.

  11. Shimpei Matsuzaki, Hirokazu Hirano, Yoshikatsu Sakamoto and Koichi Yamaguchi : gIN-PLANE HIGH DENSITY InAs QUANTUM DOTS ON GaAs/Ge(001) FOR SOLAR CELL APPLICATIONSh,21st International Photovoltaic Science and Engineering Conference, (November 28-December 2, 2011), Fukuoka, Japan, 2D-4P-08, 458.

  12. K. Yamaguchi, E. Saputra, J. Ohta and K. Funahara : gIn-plane densification of InAs self-assembled quantum dotsh, The 3rd Int. Conf. on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (Sept. 2011), Traunkirchen, Austria, P-4.

  13. H.Fujita, K.Yamamoto, J.Ohta, Y.Eguchi and K.Yamaguchi : gIn-Plane Quantum-Dot Superlattices of InAs on GaAsSb/GaAs(001) for Intermediate Band Solar-Cellsh, 37th IEEE Photovoltaic Specialists Conference, (June 19-24, 2011)Seattle, Washington, A20-738.

  14. J. Ohta, K. Sakamoto, and K. Yamaguchi : gSb-Mediated Self-Formation of Ultra-High Density InAs Quantum-Dots on GaAs(001)h, 16th International Conference on Molecular Beam Epitaxy(MBE2010), (Aug. 22-27, 2010)Berlin, Germany, P1-35.

  15. K. Hirano, T. Seo, K. Minagawa, and K. Yamaguchi : gMBE Growth of InAs/GaAs Quantum Dots on Ge(001) Substratesh, 16th International Conference on Crystal Growth, (Aug. 8-13, 2010)Beijing, China, .

  16. T. Inaji, J. Ohta, K. Yamaguchi : gStacking Growth of In-Plane InAs Quantum-Dot Superlattices on GaAsSb / GaAs (001) for Solar Cell Applicationsh, 35th IEEE Photovoltaic Specialists Conference, (June 20-25, 2010)Honolulu, Hawaii, 447-C14.

  17. T.Yanagisawa, Y.Ogawa, K.Yamaguchi : gSelf-Formation Control of Ultra-Low Density InAs Quantum-Dots by Intermittent MBE Growthh, 37th Int. Symposium on Compound Semiconductors (ISCS2010), (May 31-4) Takamatsu, MoP11, p.13.

  18. K.Yamaguchi, N.Tsukiji, S.Sekiguchi, T.Seo, J.Ohta and T.Inaji : g(Invited) Self-Formation Control of GaAs/InAs Quantum Dots for Solar Cells with Intermediate Bandsh, The Japan-China Workshop on Sensitized Solar Cells, (Feb. 25-26, 2010) Chofu, P2-5.

  19. N.Kakuda, S.Sekiguchi, T.Seo and K.Yamaguchi : gFabrication of High-density and High-uniformity InAs Quantum Dots on GaAs(001) and Ge(001) Substrates for Solar Cell Applicationsh, The 2nd International Symposium on Innovative Solar Cells, (Dec. 7-8, 2009) Tsukuba, P62, p.319.

  20. K.Yamaguchi, N.Kakuda, S.Sekiguchi and Y.Kanemaru : g(Invited) Density Control of Self-Assembled InAs/GaAs Quantum Dotsh, The 2nd International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano-2009), (Aug. 10-14, 2009) Anan, O-18.

  21. T.Seo, K.Hirano and K.Yamaguchi : gMBE Growth of InAs/GaAs Quantum Dots on Ge(001) Substratesh, The 2nd International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano-2009), (Aug. 10-14, 2009) Anan, P-16.

  22. S.Sekiguchi, P.Polachet and K.Yamaguchi : gFine control of super low-density InAs quantum dots by intermittent growth using MBEh, The 14th International Conference on Modulated Semiconductor Structures (MSS-14), (July. 19-24, 2009) Kobe, Mo-mP15, p.27.

  23. T.Kaizu, N.Kakuda, M.Takahasi, S.Fujikawa and K.Yamaguchi : gReal-time X-ray diffraction measurements during Sb-mediated SK growth and annealing of InAs quantum dotsh, The 14th International Conference on Modulated Semiconductor Structures (MSS-14), (July. 19-24, 2009) Kobe, Tu-mP73, p.187.

  24. K.Yamaguchi, N.Kakuda, S.Sekiguchi, K.Yamamoto and Y.Kanemaru: "Uniform formation of high-density InAs quanutum dots by using nanoholes", International Symposium on Innovative Solar Cells 2009. (Mar. 2-3, 2009) Tokyo

  25. M.Hirose, Jiaying Hu and K.Yamaguchi : gAnnealing properties of InAs quantum dots grown on GaAsSb/GaAs buffer layers", The 2nd IEEE Nanotechnology Materials and Devices Conference (NMDC 2008), (Oct. 20-22, 2008) Kyoto, Mo P3, pp.48.

  26. S.Sekiguchi, N.Tsukiji and K.Yamaguchi : gNarrow photoluminescence spectra of closely stacked InAs quantum dots with high dot density on GaSb/GaAs(001)", The 5th International Conference on Semiconductor Quantum Dots (QD-2008), (May. 11-16, 2008) Gyeongju, Tu-P-101, pp.220.

  27. K.Yamaguchi, T.Kanto, N.Kakuda, N.Tsukiji and P.Polachet : g(Invited) Progress in Size Uniformity and Density Control of Self-Assembled InAs Quantum Dots", Joint Conferences on Interaction Among Nanostrcutures (VC-IAN 2008), (Feb. 3-7, 2008) Orlando, pp.23-24.

  28. P.Pachakapt and K.Yamaguchi : gSelf-Formation Control of Low-Density InAs Quantum-Dots", The 34th International Symposium on Compound Semiconductors (iscs2007), (Oct. 15-18, 2007) Kyoto, p.172.

  29. T.Kaizu, M.Takahashi, K.Yamaguchi, and J.Mizuki : gIn situ X-ray Crystal Truncation Rod Scattering Measurements of Sb Irradiated GaAs (001) Surface", The 34th International Symposium on Compound Semiconductors (iscs2007), (Oct. 15-18, 2007) Kyoto, p.274.

  30. K.Yamaguchi, T.Kanto and N.Kakuda : g(Invited) Sb-Mediated Growth of Self-Assembled InAs Quantum Dots by Molecular Beam Epitaxy", 5th Int. Workshop on Semiconductor Surface Passivation (SSP-2007), (Sep. 16-19, 2007) Zakopane, p.33.

  31. N.Kakuda and K.Yamaguchi : gMBE Growth of Sb-Containing InAs Quantum Dots and Their GaAsSb Capping Layers", 5th Int. Workshop on Semiconductor Surface Passivation (SSP-2007), (Sep. 16-19, 2007) Zakopane, p.48.

  32. K.Yamaguchi, N.Kakuda, T.Kanto and M.Ohta : g(Invited) Self-Formation of High-density and High-uniformity InAs Quantum Dots for Optical Communication Devices ", SPIE Optics East 2007, (Sep. 9-11, 2007) Boston, 6779-11.

  33. N.Kakuda, T.Yoshida and K.Yamaguchi : gSb-mediated growth of high-density InAs Quantum Dots and GaAsSb Embedding Growth by MBEh, 2007 International Conference on Indium Phosphide and Related Materials, (May 14-18, 2007) Matsue, pp.458-461.

  34. K.Yamaguchi : g(Invited) Sb-mediated Stranski-Krastanov Growth of High-density InAs Quantum Dots on GaAs(001)h, Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures, (Sep. 18-23, 2006) Bonassola (Italy), pp.69-70.

  35. S. Tonomura, M. Tomita and K. Yamaguchi : g Uniform Self- Formation of High-Density InAs Quantum Dots by InGaAs Embedding Growth h, 2006 International Conference on Solid State Devices and Materials (SSDM 2006), (Sep. 12-15, 2006) Kanagawa, I-1-3, pp.184.

  36. N. Tsukiji and K. Yamaguchi : g Closely Stacking Growth of Highly Uniform InAs Quantum-Dot Molecules on Self-Formed GaAs Nanoholes h, The 14th International Conference on Molecular Beam Epitaxy (MBE2006), (Sep. 3-8, 2006) Tokyo, ThP-56, pp.333.

  37. N. Kakuda, S, Tsukamoto, K. Yamaguchi and Y. Arakawa : g InAs quantum dots formation on Sb irradiated GaAs(001) observed by in situ STM inside MBE growth chamber h, The 14th International Conference on Molecular Beam Epitaxy (MBE2006), (Sep. 3-8, 2006) Tokyo, MoP-53, pp.70.

  38. A. Ishii , K. Fujiwara , T. Ebisuzaki , N. Kakuda , S. Tsukamoto , K. Yamaguchi and Y. Arakawa : g Atomic structure of epitaxially grown GaSb/GaAs(001) surface using the first principles calculation h, The 14th International Conference on Molecular Beam Epitaxy (MBE2006), (Sep. 3-8, 2006) Tokyo, MoP-55, pp..

  39. T. Kaizu , M. Takahasi , M. Horita , T. Satoh , K. Yamaguchi and J. Mizuki : g In-situ X-ray diffraction study on modification of InAs quantum dot structure during annealing h, The 14th International Conference on Molecular Beam Epitaxy (MBE2006), (Sep. 3-8, 2006) Tokyo, WeP -13, pp..

  40. T.Kanto and K.Yamaguchi : g High-Density InAs Quantum Dots on GaAsSb/GaAs(001) Layers by Molecular Beam Epitaxy h, The 4th International Conference on Semiconductor Quantum Dots (QD-2006), (May 1-5, 2006) Chamonix-Mont Blanc, France, Poster session 2 P-18, p.251.

  41. T.Kanto and K.Yamaguchi : g In-Plane Ordering of Self-Assembled InAs Quantum Dots on GaAsSb/GaAs(001) Layers by Molecular Beam Epitaxy h, 2005 International Microprocesses and Nanotechnology Conference (MNC-2005), (Oct. 26-28, 2005) Tokyo, 28B-9-2, pp.246-247.

  42. M.Ohta, T.Kanto and K.Yamaguchi : g Self-formation of High-Density and High-Uniformity InAs Quantum Dots on GaSb/GaAs Layers by Molecular Beam Epitaxy h, 2005 International Conference on Solid State Devices and Materials (SSDM 2005), (Sep. 13-15, 2005) Kobe, E-1-4, p.98-99.

  43. K.Yamaguchi : g Control of Self-Assembled InAs Quantum Dots by Molecular Beam Epitaxy h, International Symposium on Quantum Dots and Photonic Crystals 2005 (QDPC2005), (Mar. 7-8, 2005) Tokyo, D-5, p.15.

  44. T.Yoshida and K.Yamaguchi : g Stacking Growth of High-Density InAs Quantum-Dots on GaSb/GaAs Layers by Molecular Beam Epitaxy h, International Symposium on Quantum Dots and Photonic Crystals 2005 (QDPC2005), (Mar. 7-8, 2005) Tokyo, P-9, p.30.

  45. T.Kanto and K.Yamaguchi : g Two-Dimensional Self-Arrangement of InAs Quantum Dots on GaAsSb/GaAs(001) Layers by Molecular Beam Epitaxy h, International Symposium on Quantum Dots and Photonic Crystals 2005 (QDPC2005), (Mar. 7-8, 2005) Tokyo, P-10, p.31.

  46. M.Ohta, T.Kanto and K.Yamaguchi : g Self-Formation of High-Density and High-Uniformity InAs Quantum-Dots on GaSb/GaAs Layers by MBE h, International Symposium on Quantum Dots and Photonic Crystals 2005 (QDPC2005), (Mar. 7-8, 2005) Tokyo, P-7, p.28.

  47. M.Horita, T.Kaizu and K.Yamaguchi : g Structural Stability of Size-Limited InAs Quantum Dots during Growth Interruption h, International Symposium on Quantum Dots and Photonic Crystals 2005 (QDPC2005), (Mar. 7-8, 2005) Tokyo, P-15, p.36.

  48. T.Kaizu, M.Takahashi, M.Horita, T.Satoh, K.Yamaguchi and J.Mizuki : g In-situ X-ray diffraction study on modification of InAs quantum dot structure during growth interruption h, International Symposium on Quantum Dots and Photonic Crystals 2005 (QDPC2005), (Mar. 7-8, 2005) Tokyo, P-16, p.37.

  49. T.Satoh and K.Yamaguchi : g Control of Self-Formed GaAs Nanoholes Combined with Embedded InAs Quantum Dots h, 2004 Int. Conference on Solid State Devices and Materials (SSDM-2004), (Sep. 15-17, 2004) Tokyo, P9-4, pp.618-619.

  50. K.Yamaguchi and T.Kanto : g Self-Assembled InAs Quantum Dots on GaSb/GaAs(001) layers by Molecular Beam Epitaxy h, 14th Int. Conference on Crystal Growth / 12th Int. Conference on Vapor Growth and Epitaxy (ICCG-14/ICVGE-12), (Aug.9-13, 2004) Grenoble, T03-3, p.644.

  51. A.Tackeuchi, Y.Suzuki, M.Murayama, T.Kitamura, T.Kuroda, T.Takagahara and K.Yamaguchi :g Spin Relaxation Dynamics in Highly Uniform InAs Quantum Dots h, 27th Int. Conference on the Physics of Semiconductors (ICPS-2004), (Jul. 26-30, 2004) Arizona

  52. T.Nakai and K.Yamaguchi : g Analysis of Sb-As Exchange Reaction in Molecular Beam Epitaxy of GaSb/GaAs Quantum Wells h, 12th Int. Conference on Solid Films and Surface (ICSFS-12), (Jun. 21-25, 2004) Hamamatsu, P1-31, p.64.

  53. Y.Kobayashi and K.Yamaguchi: g Control of Light Emitting Wavelength from Uniform InAs Quantum Dots by Annealing h, 12 th Int. Conference on Solid Films and Surface (ICSFS-12), (Jun. 21-25, 2004) Hamamatsu, P2-11, p.187.

  54. T.Miura, T.Nakai and K.Yamaguchi : gAtomically controlled GaSb-termination of GaAs surface and its propertiesg, 7th Int. Conference on Atomically Controlled of Surfaces, Interfaces and Nanostructures (ACSIN-7), (Nov.16-20, 2003) Nara, 18P055, p.425.

  55. T.Kaizu, Y.Suzuki and K.Yamaguchi : g Highly Uniform and Highly Dense InAs Quantum Dots by MBE Stacking Growth g, International Symposium on Quantum Dots and Photonic Crystals 2003 (QDPC2003), (Nov. 17-18, 2003) Tokyo, P-4 p.24.

  56. H.Takeda, T.Kaizu and K.Yamaguchi : g 1.3-ƒÊm Light Emission from InAs Quantum Dots in a GaAs Matrix h, International Symposium on Quantum Dots and Photonic Crystals 2003 (QDPC2003), (Nov. 17-18, 2003) Tokyo, P-14 p.34.

  57. T.Sato and K.Yamaguchi : g Self-Formation of GaAs Nanoholes Combined with Embedded InAs Quantum Dots g, International Symposium on Quantum Dots and Photonic Crystals 2003 (QDPC2003), (Nov. 17-18, 2003) Tokyo, P-3 p.23.

  58. M.Horita, S.Iwasaki and K.Yamaguchi : g Uniform Formation of GaSb Quantum Dots by Molecular Beam Epitaxy g, International Symposium on Quantum Dots and Photonic Crystals 2003 (QDPC2003), (Nov. 17-18, 2003) Tokyo, P-8 p.28.

  59. T.Kanto and K.Yamaguchi : g Self-Formation of One-Dimensional InAs Quantum-Dot-Chains on Vicinal GaAs(001) Substrates h, International Symposium on Quantum Dots and Photonic Crystals 2003 (QDPC2003), (Nov. 17-18, 2003) Tokyo, P-2 p.22.

  60. K.Yoshimoto, S.Konoshita, Y.Sugimoto, M.Abe, S.Morita, T.Kaizu, K.Yamaguchi, K.Matsuda, T.Saiki and D.Fujita : g Kelvin Probe Force Microscopy Measurement of InAs Quantum Dots h, 1 st Int. Symposium on Active Nano-Characterization and Technology (ANCT-2003), (Nov. 12-14, 2003) Tsukuba, P-53.

  61. D.Murahara, Y.Kobayashi and K.Yamaguchi : g Observation of Spin-dependent Tunnel Conductance by Spin-polarized Scanning Tunneling Microscopy Using Ni tips h, 16th Int. Microprocesses and Nanotechnology Conference (MNC-2003), (Oct. 28-31, 2003) Tokyo, 30P-7-32, pp.232-233.

  62. K.Yamaguchi, T.Kaizu, T.Kanto and Y.Suzuki : g(Invited) Self-Formation of InAs Quantum Nanostructures - Uniform Quantum Dots, Quantum-Dot Chains and Nanoholes - g, 8 th IUMRS Int. Conference on Advanced Materials 2003 (IUMRS-ICAM 2003), (Oct. 8-13, 2003) Yokohama, A1-12-O18, p.6.

  63. S.Iwasaki, T.Nakai and K.Yamaguchi : g Self-Assembled GaAs/GaSb Quantum Dots by Molecular Beam Epitaxy g, 8 th IUMRS Int. Conference on Advanced Materials 2003 (IUMRS-ICAM 2003), (Oct. 8-13, 2003) Yokohama, A1-12-P06, p.7.

  64. T.Nakai, S.Iwasaki and K.Yamaguchi : gControl of GaSb/GaAs Nanostructures by Molecular Beam Epitaxy g, 2003 Int. Conference on Solid State Devices and Materials (SSDM-2003), (Sep. 16-18, 2003) Tokyo, P8-6, pp.608-609.

  65. A.Takeuchi, R.Ohtsubo, M.Murayama, T.Kitamura, T.Kuroda, Y.Nakata, N.Yokoyama and K.Yamaguchi : g Observation of Spin Relaxation, Tunneling, Anti-Ferromagnetic Coupling and Spin-Pauli-Blocking in Quantum Dots h, 2 nd Int. Conference and School on Spintronics and Quantum Information Technology (SPINTECH II), (Aug. 4-8, 2003) Brugge Belgium

  66. Y.Suzuki, T.Kaizu and K.Yamaguchi : g Controlled Stacking Growth of Uniform InAs Quantum Dots by Molecular Beam Epitaxy h, 11 th Int. Conference on Modulated Semiconductor Structures (MSS-11), (Jul. 14-18, 2003) Nara, B5, pp.163-164.

  67. T.Kaizu and K.Yamaguchi : g Facet Formation of Uniform InAs Quantum Dots by Molecular Beam Epitaxy h, 15th Int. Microprocesses and Nanotechnology Conference (MNC-2002), (Nov. 6-8, 2002) Tokyo.

  68. K.Yamaguchi : g(Invited) Self Formation of Uniform Quantum Dots and One-Dimensional Quantum-Dot Chains g, Int. Symposium on Nano-Intelligent Materials/System (ISNIMS), (Oct. 30, 2002) Tokyo, proceedings pp.17-22.

  69. S.Iwasaki and K.Yamaguchi, : h Shape Transition of InAs from 2-Dimensional Islands to 3-Dimensional Dots by Annealing g, 4 th Int. Symposium on Control of Semiconductor Interfaces (ISCSI-4), (Oct.21-25, 2002) Karuizawa, B2-2.

  70. M.Murayama, R.Ohtsubo, T.Kitamura, T.Kuroda, K.Yamaguchi and A.Takeuchi : g Observation of Spin Pauli Blocking in InAs High-Uniform Quantum Dots g, 2 nd Int. Conference on Semiconductor Quantum Dots (QD-2002), (Sep. 30 - Oct. 3, 2002), Tokyo, M-9, p.143.

  71. T.Kitamura, R.Ohtsubo, M.Murayama, T.Kuroda, K.Yamaguchi and A.Takeuchi : g Direct Observation of Phonon Relaxation Bottleneck in InAs High-Uniform Quantum Dots g, 2 nd Int. Conf. on Semiconductor Quantum Dots (QD-2002), (Sep. 30 - Oct. 3, 2002), Tokyo, M-13, p.147.

  72. T.Kanto and K.Yamaguchi : g Fabrication of One-Dimensional InAs Quantum-Dot Chains on GaAs/InGaAs Strained Buffer Layer by Molecular Beam Epitaxy g, 2 nd Int. Conference on Semiconductor Quantum Dots (QD-2002), (Sep. 30 - Oct. 3, 2002), Tokyo, D-2, p.24.

  73. K.Yamaguchi, T.Kaizu, R.Ohtsubo and S.Iwasaki : g(Invited) Self Size-Limiting Growth of Uniform InAs Quantum Dots by Molecular Beam Epitaxyg, 2002 Int. Conference on Solid State Devices and Materials (SSDM-2002), (Sep. 17-19, 2002) Nagoya, F-7-1, pp.806-807.

  74. R.Ohtsubo and K.Yamaguchi : g High Quality InAs Quantum Dots Covered by InGaAs/GaAs Hetero-Capping Layer h, 6th Int. Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (EXMATEC-2002), (May 26-27, 2002) Budapest.

  75. T.Kawagoe, Y.Suzuki, E.Tamura, K.Yamaguchi, and K.Koike : g Observation of Spin-polarized Electrons Using STM-differential Conductivity and Photo-assisted Tunneling Measurementsg, 2001 JRCAT Symposium on Atom Technology (Dec.11, 2001) Tokyo, [Extended Abstracts, pp.287-290].

  76. T.Miura and K.Yamaguchi : g Spin-Polarized Scanning Tunneling Microscopy Using Optically Pumped GaAs Tips g, 14th Int. Microprocesses and Nanotechnology Conference (Oct.31-Nov.2, 2001) Matsue, [Digest of Papers 1D-6-15, pp.160-161].

  77. Y.Saito, R.Otsubo and K.Yamaguchi,: g Size Ordering Effects of InAs Quantum Dots During a GaAs Capping Growth g, 28th Int. Symposium on Compound Semiconductors (Oct.1-4, 2001) Tokyo [Abstract: WeP-16, p.156]. Inst.Phys.Conf.Ser.(2002) No.170,Chap.7,531.

  78. K.Yamaguchi, T.Kaizu, K.Yujobo and Y.Saito: g Uniform Formation Process of Self-Organized InAs Quantum Dots g, 13th Int. Conference on Crystal Growth / 11th Int. Conference on Vapor Growth and Epitaxy (Jul.30-Aug.4, 2001) Kyoto [Abstracts: 01p-S11-05, p.231].

  79. K.Yamaguchi, Y.Saito and R.Otsubo: g Size-Shrinkage Effects of InAs Quantum Dots During the Growth of GaAs Capping Layer g, 8th Int. Conference on the Formation of Semiconductor Interface (Jun.10-15, 2001) Sapporo. [Abstracts: TuP-15, pp.90-91.]

  80. T.Kaizu and K.Yamaguchi : g (Invited) Narrow Size Distribution of Facet-Formed InAs Quantum Dots g, 6th Int. Symposium on Advanced Physical Fields, Fabrication of Nanostructures (Mar.6-9, 2001) Tsukuba [Proceedings, pp.242-247 and Abstracts, P-2].

  81. Y.Suzuki, T.Manago, R.Shinohara, K.Yamaguchi, T.Kawagoe, H.Akinaga, T.Kuroda, F.Minami and S.Yuasa : g Photo-Excitation Spectra in Spin-Polarized STM Using Optically Pumped GaAs Tips g, 2000 JRCAT Int. Symposium on Atom Technology (Nov.7, 2000) Tokyo.

  82. K.Yamaguchi, R.Shinohara, H.Hirota, T.Miura and M.Hashimoto : g Application of Micro-Fabricated GaAs Tip to Spin-Polarized Scanning Tunneling Microscope g, The Int. Workshop on Polarized Electron Source and Polarimeter 2000 (Oct.12-14, 2000) Nagoya.

  83. Y.Suzuki, T.Manago, H.Akinaga, T.Kawagoe, R.Shinohara, K.Yamaguchi, E.Tamura and S.Yuasa : g Photo-Assisted Electron Tunneling from GaAs to Ferromagnets in Micro-Fabricated Junctions and Spin-Polarized STMh, Int. Symposium on Surface and Interface: Properties of Different Symmetry Crossing-2000 (Oct.17-20, 2000) Nagoya.

  84. K.Yamaguchi and T.Kaizu : g Self Size Limit of InAs Quantum Dots Grown by Molecular Beam Epitaxy g, 3rd Int. Symposium on Formation, Physics and Device Application of Quantum Dot Structures (Sep. 10-14, 2000) Sapporo, [proceedings: pp.1885-1887, abstract: Tu1-10, p.88.]

  85. R.Shinohara, K.Yamaguchi, H.Hirota, Y.Suzuki, T.Manago, H.Akinaga, T.Kuroda and F.Minami: g Lifetime and Spin Relaxation Time Measurements of Micro-fabricated GaAs Tipsh, 13th Int. Microprocesses and Nanotechnology Conference (Jul.11-13, 2000) Tokyo, [Digest of Papers, 12C-6-7, pp.170-171].

  86. K.Yamaguchi and K.Kawaguchi : g Self-Organized Quantum Dot Chains of InAs Grown by Molecular Beam Epitaxy g, 10th Int. Conference on Solid Films and Surfaces (Jul.9-13, 2000) Princeton, We-P-104.

  87. Y.Suzuki, W.Nabhan, R.Shinohara, K.Yamaguchi, T.Kawagoe, K.Shigeto, T.Manago, H.Akinaga, T.Kuroda, F.Minami and S.Yuasa: g Spin-Polarized STM Using Optically Pumped GaAs Tipsh, Int. Symposium on Spin-Electronics (Jul. 3-6, 2000) Germany.

  88. Y.Suzuki, W.Nabhan, R.Shinohara, K.Yamaguchi, T.Kawagoe, K.Shigeto, T.Manago, H.Akinaga, T.Kuroda, F.Minami and S.Yuasa: g Possible Parasitic Signals in the Spin-Polarized STM Using Optically Pumped GaAs Tipsh, Int. Symposium on Nanoscale Magnetism and Transport (March 8-10, 2000) Sendai.

  89. T.Kawagoe, Y.Suzuki, R.Shinohara, K.Yamaguchi, T.Sato and E.Tamura : g Progress Toward Spin-Polarized STM Using Ferromagnetic and Semiconductor Tips g, '99 JRCAT Int. Symposium on Atom Technology (Nov.25, 1999) Tokyo, [Extended Abstracts, pp.311-314].

  90. R.Shinohara and K.Yamaguchi : g Observation of Spin-Dependent Tunneling Current Using Optically Pumped GaAs Microtip g, 12th Int. Microprocesses and Nanotechnology Conference (Jul.6-8, 1999) Yokohama, [Digest of Papers, 7C-6-17, pp.128-129].

  91. K.Yamaguchi, T.Hiraike and K.Kawaguchi : g One-Dimensional Alignment of InAs Quantum Dots on Strain-Controlled InGaAs Layers by Selective-Area Molecular Beam Epitaxy g, 5th Int. Conference on Atomically Controlled Surfaces, Interface and Nanostructures (Jul.6-9, 1999) Aix-en Provence, TH.A 14.50 O.

  92. Y.Suzuki, W.Nabhan, K.Yamaguchi, R.Shinohara and T.Katayama : g Spin-Sensitive Scanning Tunneling Microscope Using GaAs Optically Pumped Tips g, Int. Symposium on EMRS, 1998,

  93. Y.Suzuki, R.Shinohara, W.Nabhan, K.Yamaguchi and T.Sato : g A Trial of Spin-Sensitive STM Using Micro-Fabricated GaAs Tips g, '98 JRCAT Int. Symposium on Atom Technology (Nov.25, 1998) Tokyo [Abstracts, P48]

  94. Y.Suzuki, W.Nabhan, R.Shinohara and K.Yamaguchi : g Observation of Co Ultrathin Films Using Scanning Tunneling Microscope Equipped with GaAs Photo-excited Tips g, Int. Symposium on Surface and Interface: Properties of Different Symmetry Crossing (Nov.19-21, 1998) Tokyo [Extended Abstracts, P48]

  95. K.Yamaguchi, R.Shinohara and M.Hashimoto : g (Invited) Spin-Polarized Scanning Tunneling Microscope Using Optically Pumped GaAs Microtip g, Int. Workshop on Physics and Technology of Nanostructured, Multicomponent Materials (Sep.24-26, 1998) Ukraine [Abstracts, p.16].

  96. W.Nabhan, Y.Suzuki, R.Shinohara and K.Yamaguchi : g Effect of Dichroism in the GaAs Tip-Based Spin-Polarized STM g, 14th Int. Vacuum Congress and 10th Int. Conference on Solid Surfaces (Aug.31-Sep.4, 1998) Birmingham.

  97. K.Yamaguchi, R.Shinohara, Y.Suzuki and W.Nabhan : g Fabrication of GaAs Microtips and Its Application to Spin-Polarized Scanning Tunneling Microscope g, 11th Int. Microprocesses and Nanotechnology Conference(Jul.13-16, 1998) Korea [Digest of Papers, 16A-7-5, pp.285-286].

  98. Y.Suzuki, W.Nabhan, K.Yamaguchi and T.Katayama : g (Invited) Spin-Sensitive Scanning Tunneling Microscope Using GaAs Optically Pumped Tips g, 3rd Int. Symposium on Metallic Multilayers (Jun.14-19, 1998) Vancouver.

  99. K.Yamaguchi, T.Hiraike and F.Hiwatashi : g Selective Self-Organization of InAs Quantum Dots on InGaAs/GaAs Buffer Layers g, 3rd Int. Symposium on Advanced Physical Fields, Fabrication of Nanostructures (Feb.18-20, 1998) Tsukuba [Proceedings, pp.242-247 and Abstracts, P-2].

  100. F.Hiwatashi and K.Yamaguchi : g Selective Growth of Self-Organizing InAs Quantum Dots on Strained InGaAs Surfaces g, 4th Int. Symposium on Atomically Controlled of Surfaces and Interfaces (Oct.27-30, 1997) Tokyo [Abstracts, PC44, pp.294-295].

  101. K.Yamaguchi, T.Okada and F.Hiwatashi : g Analysis of Indium Surface Segregation in Molecular Beam Epitaxy of InGaAs/GaAs Quantum Wells g, 2nd Int. Symposium on Control of Semiconductor Interfaces (Oct.28-Nov.1, 1996) Karuizawa [Abstracts, P5-5, p.81].

  102. K.Yamaguchi and S.Nozaki : g Self-Limited Stripe Width in the Selective Metalorganic Chemical Vapor Deposition Growth of GaAs g, 24th State-of-the-Art Program on Compound Semiconductors, 189th Meeting of the Electrochemical Society (May 5-10, 1996) Los Angeles [Proceedings, Vol.96-2, pp.253-261].