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  1. Y. Naruko, T. Kaizu, N. Miyashita and K. Yamaguchi:gOptoelectronic Properties of InAs/InAsSb In-Plane Ultrahigh Density Quantum Dots with Si-Doped GaAs Capping Layerh, The 38th International Microprocesses and Nanotechnology Conference, MNC 2025 (Nov. 17-20, 2025) Tokyo, 20B-3-2.

  2. J. Achyariya, T. Kaizu, N. Miyashita and K. Yamaguchi:gNovel Growth Method of InAs Thin Film by Lateral Overgrowth from InAs Nanowires on Si(111) substratesh, The 38th International Microprocesses and Nanotechnology Conference, MNC 2025 (Nov. 17-20, 2025) Tokyo, 20B-3-1.

  3. R. Kai, N. Miyashita, T. Kaizu and K. Yamaguchi:gSimulation of In-Plane Strong Electronic Coupling in Self-Assembled InAs Quantum Dotsh, International Conf. on Solid State Devices and Materials, SSDM2025 (Sep. 16-17, 2025) Yokohama, PS-08-14.

  4. M. Arao, S. J. Oon, N. Miyashita and K. Yamaguchi:gPhoto Properties of 2-Dimensional InAs/InAsSb Ultrahigh-Density Quantum Dot Arrayh, The 37th International Microprocesses and Nanotechnology Conference, MNC 2024 (Nov. 12-15, 2024) Kyoto, 14P-1-62.

  5. R. Watanabe, Y. Fujisawa, R. Nakagawa, N. Miyashita and K. Yamaguchi:gMBE Growth of High-Density InAs/InAsSb Nanowires on Si(111) Substrates and Their Mid-Infrared Emissionh, Compound Semiconductor Week 2024 (CSW-2024), (Jun. 3-6, 2024), Lund University, 42.

  6. S. J. Oon, N. Miyashita and K. Yamaguchi:gPhotoluminescence Properties of InAs/InAsSb In-Plane Ultrahigh-Density Quantum-Dot Layer with In-Plane Enenrgy Minibandh, Compound Semiconductor Week 2023 (CSW-2023), (May. 29- Jun 2, 2023), Jeju, P1-066.

  7. R. Watanabe, R. Nakagawa, N. Miyashita and K. Yamaguchi:gHigh-Density InAs Quantum Nanowires on Si(111) Substrates by MBEh, Compound Semiconductor Week 2023 (CSW-2023), (May. 29- Jun 2, 2023), Jeju, P1-067.

  8. K. Yamaguchi:g(Invited) InAs In-Plane Ultrahigh-Density Quantum Dots - MBE Growth and Their Device Applications -h, The 8th Int. Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures, (Aug.30 - Sep.03, 2021), Milano (online), p.21.

  9. K. Sasaki, Y. Tanaka and K. Yamaguchi:gFabrication of InAs Quantum Dots on Fused Silica Substrates by Molecular Beam Depositionh, The 32nd International Microprocesses and Nanotechnology Conference, (Nov. 9-12, 2020) online, 2020-23-4.

  10. Y. Tanaka, K. Sasaki, A. Makaino and K. Yamaguchi:gEnhancement of Photoluminescence of InAs Quantum Dots grown on SiOx Films by Molecular Beam Depositionh, The 7th Int. Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures, (Sep. 24-27, 2019), Kobe, P-09.

  11. K. Uno, N. Iijima and K. Yamaguchi:gFabrication of Mid-Infrared LEDs Using InAs/InGaAsSb Superlattice Structures Grown by MBEh, The 7th Int. Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures, (Sep. 24-27, 2019), Kobe, P-29.

  12. M. Tanaka, K. Banba and K. Yamaguchi:gFabrication of In-Plane Ultrahigh-Density InAs Quantum Dots and Their Quantum-Dot Laser Applicationsh, SPIE Photonics Optics + Photonics 2019,(Aug.11-16, 2019), San Diego, 11089-92.

  13. K. Terada, T. Togawa, F. Ozeki, K. Sakamoto, T. Sogabe and K. Yamaguchi:gSunlight Concentration Properties of InAs/InAsSb Ultrahigh-Density Quantum -Dot Solar Cells", The 46th IEEE Photovoltaic Specialists Conference, (June 17-21, 2019), Chicago, B8-776.

  14. S. Tatsugi, R. Sugiyama and K. Yamaguchi:gPhotoluminescence Mapping Analysis of In-Plane Ultrahigh-Density InAs/GaAsSb Quantum Dot Layersh, Compound Semiconductor Week 2019 (CSW2019), (May 19-23, 2019) Nara, MOP-F-5, p.27.

  15. K. Yamaguchi :g(Invited) Fabrication of III-V Compound Semiconductor Quantum Dots and Their Device Applications h, Silver Jubilee Advanced Functional Materials Congress (AFMC-25), (March 24-27, 2019), Stockholm, 134-135.

  16. A. Makaino, Y. Tanaka and K. Yamaguchi:gFabrication of InAs Quantum Dots on SiOx Films by Molecular Beam Depositionh, The 31st International Microprocesses and Nanotechnology Conference, (Nov. 13-16, 2018) Sapporo, 16D-9-2.

  17. K. Yamaguchi:gQuantum Dot Technology for Optoelectronic Device Applicationsh, Joint International Symposium of Energy and Environment between NU, KIT and UEC, (July 27, 2018) Chofu, 4-2.

  18. S. Tatsugi, R. Sugiyama, T. Kato, T. Sogabe and K. Yamaguchi:gPhotoluminescence Mapping of In-Plane Ultrahigh-Density InAs Quantum Dots for Solar Cell Applicationsh, The 7th World Conference on Photovoltaic Energy Conversion (WCPEC-7), (Jun. 10-15, 2018) Kaikoloa, Hawaii, B15.

  19. K. Yamaguchi, A. Makaino, K. Sakamoto and T. Sogabe:gSelf-Formation of InAs Quantum Dots on Oxide/Semiconductor Substrates by Molecular Beam Depositionh, Compound Semiconductor Week 2018 (CSW-2018), (May. 29- Jun 1, 2018), Boston, Fr15PP-NS.12, p.155.

  20. R. Suzuki, R. Sugiyama, T. Sogabe and K. Yamaguchi:gOptical Transition and Carrier Transport in Type-II Heterostructures of Highly Dense InAs Quantum Dots on GaAsSb/GaAsh, The 27th Int. Photovotaic Sicnece and Engineering Conference (PVSEC-27), (Nov. 12-17, 2017), Otsu, 6ThPo.183.

  21. T. Sogabe, M. Mori, K. Sakamoto, K. Yamaguchi and T. Okada:gLight Interfererence Integrated Device Simulation in Thin Film InAs/GaAs Quantum Dot Solar Cellh, The 27th Int. Photovotaic Sicnece and Engineering Conference (PVSEC-27), (Nov. 12-17, 2017), Otsu, 6ThPo.185.

  22. R. Sugiyama, S. Tatsuki, T. Sogabe and K. Yamaguchi:g Study on Carrier Dyanamics in Ultrahigh-Density InAs Quantum-Dot Layer for Solar Cell Applications", Int. Symp. Novel Energy Nanomaterials, Catalysts and Surface for Future Earth (NENCS), (Oct 28-30, 2017), Tokyo, 2P-90, p.234.

  23. R. Suzuki, R. Sugiyama, T. Kato, T. Sogabe and K. Yamaguchi:gInfluence of Urback Tail on Fundamental Properties of Solar Cells Using In-Plane Ultrahigh-Density InAs Quantum Dots", Int. Symp. Novel Energy Nanomaterials, Catalysts and Surface for Future Earth (NENCS), (Oct 28-30, 2017), Tokyo, 2P-89, p.233.

  24. T. Sogabe, M. Mori, K. Sakamoto, K. Yamaguchi and Y. Okada: :gLight Interference Integrated Device Simulation in Thin Film InAs/GaAs Quantum Dot Solar Cell", Int. Symp. Novel Energy Nanomaterials, Catalysts and Surface for Future Earth (NENCS), (Oct 28-30, 2017), Tokyo, O-56, p.84.

  25. R. Sugiyama, N. Akimoto, T. Sogabe and K. Yamaguchi :gPhotoluminescence Properties of In-Plane Ultrahigh-Density InAs Quantum Dots on GaAsSb/GaAs(001) for Solar Cell Applications ", The 44th IEEE Photovoltaic Specialists Conference, (June 25-29, 2017), Washington, A25.

  26. S. Oikawa, A. Makaino, T. Sogabe and K. Yamaguchi:gSelf-Formation of In-Plane Ultrahigh-Density InAs Quantum Dots and Their Photoluminescence Propertiesh, Compound Semiconductor Week 2017 (CSW-2017), (May. 14-18, 2017), Berlin, P2-22.

  27. K. Nii, Y. Minami, K. Sakamoto, T. Sogabe and K. Yamaguchi:gPhotoluminescence and Photovoltaic Properties of Ultrahigh Density InAs Quantum Dots on InAsSb/GaAs(001)h, The 26th Photovotaic Sicnece and Engineering Conference (PVSEC-26), (Oct. 24-28, 2016), Singapore, 1_1-0017.

  28. T. Sogabe, K. Nii, Y. Minami, K. Sakamoto, K. Yamaguchi and T. Okada:gInvestigation of Hot Carrier Transportation Dynamics in InAs/GaAs Quantum Dot Solar Cellh, The 26th Photovotaic Sicnece and Engineering Conference (PVSEC-26), (Oct. 24-28, 2016), Singapore, 1.2.3f.

  29. K. Yamaguchi :g (Invited) Fabrication of Ultrahigh-Density GaAsSb/InAsSb Quantum Dots and Their Photovoltaic Applicationsh, Collaborative Conference on 3D & Materials Research (CC3DMR) 2016, (Jun. 20-24, 2016), Incheonn.

  30. K. Yamaguchi, K. Sameshima, K. Sakamoto and K. Nii:g(Invited) Self-Formation of Ultrahigh-Density InAs Quantum Dots for Intermediate-Band Solar Cell Applicationsh, SPIE Photonics West 2016, (Feb. 13-19, 2016), San Francisco, 9743-44.

  31. K. Yamaguchi :g (Invited) Fabrication of Ultrahigh-Density InAs Quantum Dot Layers and Their In-Plane Carrier Transport Propertiesh, The 5th Int. Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures, (Sep. 6-11, 2015), Hsinchu, Taiwan, I-12.

  32. N. Akimoto, S. Uchida and K. Yamaguchi :gPhoto-Conductance Properties of Ultrahigh-Density InAs/GaAsSb Quantum Dots ", The 42nd IEEE Photovoltaic Specialists Conference, (June 14-19, 2015), New Orleans, A3-731.

  33. K. Uchida, S. Uchida, K. Sakamoto and K. Yamaguchi :gSun-Concentration Properties and Two-Step Photoexcitation Effects of In-Plane High-Density InAs/GaAsSb Quantum Dot Layers h, The 7th International Symposium on Innovative Solar Cells, (Jan. 19-20, 2015), Tokyo, R-6.

  34. S. Uchida, K. Uchida, K. Sakamoto and K. Yamaguchi :gIntermediate-Band Formation of Ultrahigh-Density InAs/GaAsSb Quantum Dotsh, The 6th World Conference on Photovoltaic Energy Conversion (WCPEC-6), (Nov. 23-27, 2014) Kyoto, 1WePo.1.1.

  35. H. Yamashita, Y. Takahashi and K. Yamaguchi :gFabrication of GaAs/AlAs Micro-Pillar Cavities Including Low-Density InAs Quantum Dots and Their Photoluminescence Propertiesh, The 27th International Microprocesses and Nanotechnology Conference (MNC 2014), (Nov. 4-7, 2014) Fukuoka, 6A-6-4.

  36. M. Shiokawa, S. Uchida and K. Yamaguchi :gLong Photoluminescence Decay Time of In-Plane Ultrahigh-Density InAs Quantum Dots on GaAsSb/GaAs(001) h, The 8th International Conference on Semiconductor Quantum Dots (QD-2014), (May. 11-16, 2014), Pisa, M-140.

  37. H. Hoshino, M. Shiokawa, K. Uchida, K. Sakamoto and K. Yamaguchi :gSelf Formation of In-Plane Ultrahigh-Density InAs(Sb)/GaAs(Sb) Quantum Dots and Their Solar Cell Applications h, The 6th International Symposium on Innovative Solar Cells, (Jan. 20-21, 2014), Tokyo, PB-6.

  38. K. Uchida, K. Sakamoto and K. Yamaguchi :gQuantum-Dot Density Dependences of Power Conversion Efficiency for Intermediate-Band Solar Cellsh, 2013 JSAP-MRS Joint Symposia, (Sep. 16-20, 2013), Kyoto, 16p-PM2-6.

  39. M. Shiokawa, K. Sakamoto and K. Yamaguchi :gLong Carrier Lifetime in Ultrahigh-Density InAs Quantum-Dot Sheet of Intermediate Band Solar Cellsh, The 39th IEEE Photovoltaic Specialists Conference, (June 16-21, 2013), Tampa, Florida, B21-101.

  40. T. Sano, E. Saputra and K. Yamaguchi :gSelf-Formation of Unltrahigh Density InAs Quantum Dots on InAsSb/GaAs Layers h, The 40th Int. Symposium on Compound Semiconductors (ISCS2013), (May 19-23), Kobe, WeB1_3 .

  41. Y. Takahashi, N. Kawamoto, H. Yamashita and K. Yamaguchi :g1.5-ƒÊm Surface Emission of InAs Quantum Dots with GaAs-Nanohole Capping Layersh, The 40th Int. Symposium on Compound Semiconductors (ISCS2013), (May 19-23), Kobe, MoPC_05_07 .

  42. M. Shiokawa, T. Sano, K. Uchida, K. Sakamoto and K. Yamaguchi :gSelf-Formation of In-Plane Ultrahigh-Density InAs Quantum Dots for Intermediate-Band Solar Cellsh, The 5th International Symposium on Innovative Solar Cells, (Jan. 21-22, 2013), Tsukuba, 15.

  43. K. Yamaguchi :g(Invited) Self-Formation of In-Plane Ultrahigh-Density InAs Quantum Dots for Solar Cell Applicationsh, The 4th Int. Workshop on Quantum Nanostructure Solar Cells, (Dec. 4-5, 2012), Kobe.

  44. Y. Osaka, H. Tanabe, K. Yamada and K. Yamaguchi :gWideband Photoluminescence of High Density InAs QDs on GaAsSb/GaAs Layers h, The 17th International Conference on Molecular Beam Epitaxy (MBE 2012), (Sep. 24-27, 2012) Nara, ThP-57.

  45. E. Saputra, T. Sano, J. Ohta and K. Yamaguchi :gSelf-Formation of Ultrahigh-Density InAs Quantum Dots on GaAs(001) Substrates by Sb-Mediated MBE Growth h, The 17th International Conference on Molecular Beam Epitaxy (MBE 2012), (Sep. 24-27, 2012) Nara, TuP-39.

  46. Y. Eguchi, H. Fujita and K. Yamaguchi :gIn-Plane Quantum-Dot Superlattices of InAs on GaAsSb/GaAs(001) for Intermediate Band Solar-Cells h, The 38th IEEE Photovoltaic Specialists Conference, (June 3-7, 2012) Austin.

  47. K. Yamaguchi :g(Invited) Self-Formation of In-Plane Ultrahigh-Density InAs Quantum Dots and Their Solar Cell Applications h, 2012 Villa Conference on Interaction Among Nanostructures, (April 16-20, 2012), Florida, A39.

  48. M. Shiokawa, T. Sano, K. Uchida, K. Sakamoto and K. Yamaguchi :gSelf-Formation of In-Plane Ultrahigh-Density InAs Quantum Dots for Intermediate-Band Solar Cells h, The 4th International Symposium on Innovative Solar Cells, (March 5-6, 2012), Tokyo, .

  49. S. Matsuzaki, H. Hirano, Y. Sakamoto and K. Yamaguchi : "In-Plane High Density InAs Quantum Dots on GaAs/Ge(001) for Solar Cell Applications h, The 21st International Photovoltaic Science and Engineering Conference, (Nov. 28 - Dec. 2, 2011), Fukuoka, 2D-4P-08, 458.

  50. K. Yamaguchi, E. Saputra, J. Ohta and K. Funahara:gIn-Plane Densification of InAs Self-Assembled Quantum Dots h, The 3rd Interenational Conference on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (Sept. 11-16, 2011), Traunkirchen, Austria, P-4.

  51. H. Fujita, K. Yamamoto, J. Ohta, Y. Eguchi and K. Yamaguchi :g In-Plane Quantum-Dot Superlattices of InAs on GaAsSb/GaAs(001) for Intermediate Band Solar-Cells h, The 37th IEEE Photovoltaic Specialists Conference, (June 19-24, 2011)Seattle, Washington, A20-738.

  52. J. Ohta, H. Fujita and K. Yamaguchi :g Self-Formation of In-Plane InAs QD Superlattices with Long Carrier Lifetime h, The 3rd International Symposium on Innovative Solar Cells, (Oct. 7-8, 2010) Tokyo, P62, p.319.

  53. J. Ohta, K. Sakamoto and K. Yamaguchi :g Sb-Mediated Self-Formation of Ultra-High Density InAs Quantum-Dots on GaAs(001) h, The 16th International Conference on Molecular Beam Epitaxy (MBE 2010), (Aug. 22-27, 2010) Berlin, P1-35.

  54. K. Hirano, T. Seo, K. Minagawa, and K. Yamaguchi :g MBE Growth of InAs/GaAs Quantum Dots on Ge(001) Substrates h, The 16th International Conference on Crystal Growth, (Aug. 8-13, 2010) Beijing.

  55. T. Inaji, J. Ohta, and K. Yamaguchi : Stacking Growth of In-Plane InAs Quantum-Dot Superlattices on GaAsSb / GaAs (001) for Solar Cell Applications h, The 35th IEEE Photovoltaic Specialists Conference, (June 20-25, 2010)Honolulu, Hawaii, 447-C14.

  56. T. Yanagisawa, Y. Ogawa, and K. Yamaguchi :g Self-Formation Control of Ultra-Low Density InAs Quantum-Dots by Intermittent MBE Growth h, The 37th Int. Symposium on Compound Semiconductors (ISCS2010), (May 31-4) Takamatsu, MoP11, p.13.

  57. K. Yamaguchi, N. Tsukiji, S. Sekiguchi, T. Seo, J. Ohta and T. Inaji :g(Invited) Self-Formation Control of GaAs/InAs Quantum Dots for Solar Cells with Intermediate Bands h, The Japan-China Workshop on Sensitized Solar Cells, (Feb. 25-26, 2010) Chofu, P2-5.

  58. N. Kakuda, S. Sekiguchi, T. Seo and K. Yamaguchi :g Fabrication of High-density and High-uniformity InAs Quantum Dots on GaAs(001) and Ge(001) Substrates for Solar Cell Applications h, The 2nd International Symposium on Innovative Solar Cells, (Dec. 7-8, 2009) Tsukuba, P62, p.319.

  59. K. Yamaguchi, N. Kakuda, S. Sekiguchi and Y. Kanemaru :g (Invited) Density Control of Self-Assembled InAs/GaAs Quantum Dots h, The 2nd International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano-2009), (Aug. 10-14, 2009) Anan, O-18.

  60. T. Seo, K. Hirano and K. Yamaguchi :g MBE Growth of InAs/GaAs Quantum Dots on Ge(001) Substrates h, The 2nd International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano-2009), (Aug. 10-14, 2009) Anan, P-16.

  61. S. Sekiguchi, P. Polachet and K. Yamaguchi :g Fine control of super low-density InAs quantum dots by intermittent growth using MBE h, The 14th International Conference on Modulated Semiconductor Structures (MSS-14), (July. 19-24, 2009) Kobe, Mo-mP15, p.27.

  62. T. Kaizu, N. Kakuda, M. Takahasi, S. Fujikawa and K. Yamaguchi :g Real-time X-ray diffraction measurements during Sb-mediated SK growth and annealing of InAs quantum dots h, The 14th International Conference on Modulated Semiconductor Structures (MSS-14), (July. 19-24, 2009) Kobe, Tu-mP73, p.187.

  63. K. Yamaguchi, N. Kakuda, S. Sekiguchi, K. Yamamoto and Y. Kanemaru:g Uniform formation of high-density InAs quanutum dots by using nanoholes h, International Symposium on Innovative Solar Cells 2009. (Mar. 2-3, 2009) Tokyo

  64. M. Hirose, Jiaying Hu and K. Yamaguchi :g Annealing properties of InAs quantum dots grown on GaAsSb/GaAs buffer layers h, The 2nd IEEE Nanotechnology Materials and Devices Conference (NMDC 2008), (Oct. 20-22, 2008) Kyoto, Mo P3, p.48.

  65. S. Sekiguchi, N. Tsukiji and K. Yamaguchi :g Narrow photoluminescence spectra of closely stacked InAs quantum dots with high dot density on GaSb/GaAs(001) h, The 5th International Conference on Semiconductor Quantum Dots (QD-2008), (May. 11-16, 2008) Gyeongju, Tu-P-101, p.220.

  66. K. Yamaguchi, T. Kanto, N. Kakuda, N. Tsukiji and P. Polachet :g (Invited) Progress in Size Uniformity and Density Control of Self-Assembled InAs Quantum Dots h, Joint Conferences on Interaction Among Nanostrcutures (VC-IAN 2008), (Feb. 3-7, 2008) Orlando, pp.23-24.

  67. P. Pachakapat and K. Yamaguchi : g Self-Formation Control of Low-Density InAs Quantum-Dots h, The 34th International Symposium on Compound Semiconductors (iscs2007), (Oct. 15-18, 2007) Kyoto, p.172.

  68. T. Kaizu, M. Takahashi, K. Yamaguchi, and J. Mizuki :g In situ X-ray Crystal Truncation Rod Scattering Measurements of Sb Irradiated GaAs (001) Surface h, The 34th International Symposium on Compound Semiconductors (iscs2007), (Oct. 15-18, 2007) Kyoto, p.274.

  69. K. Yamaguchi, T. Kanto and N. Kakuda :g(Invited) Sb-Mediated Growth of Self-Assembled InAs Quantum Dots by Molecular Beam Epitaxy h, 5th Int. Workshop on Semiconductor Surface Passivation (SSP-2007), (Sep. 16-19, 2007) Zakopane, p.33.

  70. N. Kakuda and K. Yamaguchi :g MBE Growth of Sb-Containing InAs Quantum Dots and Their GaAsSb Capping Layers h, 5th Int. Workshop on Semiconductor Surface Passivation (SSP-2007), (Sep. 16-19, 2007) Zakopane, p.48.

  71. K. Yamaguchi, N. Kakuda, T. Kanto and M. Ohta :g(Invited) Self-Formation of High-density and High-uniformity InAs Quantum Dots for Optical Communication Devices h, SPIE Optics East 2007, (Sep. 9-11, 2007) Boston, 6779-11.

  72. N. Kakuda, T. Yoshida and K. Yamaguchi :g Sb-mediated growth of high-density InAs Quantum Dots and GaAsSb Embedding Growth by MBE h, 2007 International Conference on Indium Phosphide and Related Materials, (May 14-18, 2007) Matsue, pp.458-461.

  73. K. Yamaguchi :g(Invited) Sb-mediated Stranski-Krastanov Growth of High-density InAs Quantum Dots on GaAs(001) h, Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures, (Sep. 18-23, 2006) Bonassola (Italy), pp.69-70.

  74. S. Tonomura, M. Tomita and K. Yamaguchi :g Uniform Self- Formation of High-Density InAs Quantum Dots by InGaAs Embedding Growth h, 2006 International Conference on Solid State Devices and Materials (SSDM 2006), (Sep. 12-15, 2006) Yokohama, I-1-3, pp.184-185.

  75. N. Tsukiji and K. Yamaguchi :g Closely Stacking Growth of Highly Uniform InAs Quantum-Dot Molecules on Self-Formed GaAs Nanoholes h, The 14th International Conference on Molecular Beam Epitaxy (MBE2006), (Sep. 3-8, 2006) Tokyo, ThP-56, p.333.

  76. N. Kakuda, S. Tsukamoto, K. Yamaguchi and Y. Arakawa :g InAs quantum dots formation on Sb irradiated GaAs(001) observed by in situ STM inside MBE growth chamber h, The 14th International Conference on Molecular Beam Epitaxy (MBE2006), (Sep. 3-8, 2006) Tokyo, MoP-53, p.70.

  77. A. Ishii, K. Fujiwara, T. Ebisuzaki, N. Kakuda, S. Tsukamoto, K. Yamaguchi and Y. Arakawa :g Atomic structure of epitaxially grown GaSb/GaAs(001) surface using the first principles calculation h, The 14th International Conference on Molecular Beam Epitaxy (MBE2006), (Sep. 3-8, 2006) Tokyo, MoP-55, p.72.

  78. T. Kaizu, M. Takahasi, M. Horita, T. Satoh, K. Yamaguchi and J. Mizuki :g In-situ X-ray diffraction study on modification of InAs quantum dot structure during annealing h, The 14th International Conference on Molecular Beam Epitaxy (MBE2006), (Sep. 3-8, 2006) Tokyo, WeP-13, p.196.

  79. T. Kanto and K. Yamaguchi :g High-Density InAs Quantum Dots on GaAsSb/GaAs(001) Layers by Molecular Beam Epitaxy h, The 4th International Conference on Semiconductor Quantum Dots (QD-2006), (May 1-5, 2006) Chamonix-Mont Blanc (France), P-18, p.251.

  80. T. Kanto and K. Yamaguchi :g In-Plane Ordering of Self-Assembled InAs Quantum Dots on GaAsSb/GaAs(001) Layers by Molecular Beam Epitaxy h, 2005 International Microprocesses and Nanotechnology Conference (MNC-2005), (Oct. 26-28, 2005) Tokyo, 28B-9-2, pp.246-247.

  81. M. Ohta, T. Kanto and K. Yamaguchi :g Self-formation of High-Density and High-Uniformity InAs Quantum Dots on GaSb/GaAs Layers by Molecular Beam Epitaxy h, 2005 International Conference on Solid State Devices and Materials (SSDM 2005), (Sep. 13-15, 2005) Kobe, E-1-4, pp.98-99.

  82. K. Yamaguchi :g Control of Self-Assembled InAs Quantum Dots by Molecular Beam Epitaxy h, International Symposium on Quantum Dots and Photonic Crystals 2005 (QDPC2005), (Mar. 7-8, 2005) Tokyo, D-5, p.15.

  83. T. Yoshida and K. Yamaguchi :g Stacking Growth of High-Density InAs Quantum-Dots on GaSb/GaAs Layers by Molecular Beam Epitaxy h, International Symposium on Quantum Dots and Photonic Crystals 2005 (QDPC2005), (Mar. 7-8, 2005) Tokyo, P-9, p.30.

  84. T. Kanto and K. Yamaguchi :g Two-Dimensional Self-Arrangement of InAs Quantum Dots on GaAsSb/GaAs(001) Layers by Molecular Beam Epitaxy h, International Symposium on Quantum Dots and Photonic Crystals 2005 (QDPC2005), (Mar. 7-8, 2005) Tokyo, P-10, p.31.

  85. M. Ohta, T. Kanto and K. Yamaguchi :g Self-Formation of High-Density and High-Uniformity InAs Quantum-Dots on GaSb/GaAs Layers by MBE h, International Symposium on Quantum Dots and Photonic Crystals 2005 (QDPC2005), (Mar. 7-8, 2005) Tokyo, P-7, p.28.

  86. M. Horita, T. Kaizu and K. Yamaguchi :g Structural Stability of Size-Limited InAs Quantum Dots during Growth Interruption h, International Symposium on Quantum Dots and Photonic Crystals 2005 (QDPC2005), (Mar. 7-8, 2005) Tokyo, P-15, p.36.

  87. T. Kaizu, M. Takahashi, M. Horita, T. Satoh, K. Yamaguchi and J. Mizuki :g In-situ X-ray diffraction study on modification of InAs quantum dot structure during growth interruption h, Int. Symposium on Quantum Dots and Photonic Crystals 2005 (QDPC2005), (Mar. 7-8, 2005) Tokyo, P-16, p.37.

  88. T. Satoh and K. Yamaguchi :g Control of Self-Formed GaAs Nanoholes Combined with Embedded InAs Quantum Dots h, 2004 Int. Conference on Solid State Devices and Materials (SSDM-2004), (Sep. 15-17, 2004) Tokyo, P9-4, pp.618-619.

  89. K. Yamaguchi and T. Kanto :g Self-Assembled InAs Quantum Dots on GaSb/GaAs(001) layers by Molecular Beam Epitaxy h, The 14th Int. Conference on Crystal Growth / The 12th Int. Conference on Vapor Growth and Epitaxy (ICCG-14/ICVGE-12), (Aug.9-13, 2004) Grenoble, T03-3, p.644.

  90. A. Tackeuchi, Y. Suzuki, M. Murayama, T. Kitamura, T. Kuroda, T. Takagahara and K. Yamaguchi :g Spin Relaxation Dynamics in Highly Uniform InAs Quantum Dots h, The 27th Int. Conference on the Physics of Semiconductors (ICPS-2004), (Jul. 26-30, 2004) Arizona

  91. T.Nakai and K.Yamaguchi :g Analysis of Sb-As Exchange Reaction in Molecular Beam Epitaxy of GaSb/GaAs Quantum Wells h, The 12th Int. Conference on Solid Films and Surface (ICSFS-12), (Jun. 21-25, 2004) Hamamatsu, P1-31, p.64.

  92. Y. Kobayashi and K. Yamaguchi:g Control of Light Emitting Wavelength from Uniform InAs Quantum Dots by Annealing h, The 12 th Int. Conference on Solid Films and Surface (ICSFS-12), (Jun. 21-25, 2004) Hamamatsu, P2-11, p.187.

  93. T. Miura, T. Nakai and K. Yamaguchi :gAtomically controlled GaSb-termination of GaAs surface and its propertiesg, The 7th Int. Conference on Atomically Controlled of Surfaces, Interfaces and Nanostructures (ACSIN-7), (Nov.16-20, 2003) Nara, 18P055, p.425.

  94. T. Kaizu, Y. Suzuki and K. Yamaguchi :g Highly Uniform and Highly Dense InAs Quantum Dots by MBE Stacking Growth g, International Symposium on Quantum Dots and Photonic Crystals 2003 (QDPC2003), (Nov. 17-18, 2003) Tokyo, P-4 p.24.

  95. H. Takeda, T. Kaizu and K. Yamaguchi :g 1.3-ƒÊm Light Emission from InAs Quantum Dots in a GaAs Matrix h, International Symposium on Quantum Dots and Photonic Crystals 2003 (QDPC2003), (Nov. 17-18, 2003) Tokyo, P-14 p.34.

  96. T. Sato and K. Yamaguchi :g Self-Formation of GaAs Nanoholes Combined with Embedded InAs Quantum Dots g, International Symposium on Quantum Dots and Photonic Crystals 2003 (QDPC2003), (Nov. 17-18, 2003) Tokyo, P-3 p.23.

  97. M. Horita, S. Iwasaki and K. Yamaguchi :g Uniform Formation of GaSb Quantum Dots by Molecular Beam Epitaxy g, International Symposium on Quantum Dots and Photonic Crystals 2003 (QDPC2003), (Nov. 17-18, 2003) Tokyo, P-8 p.28.

  98. T. Kanto and K. Yamaguchi :g Self-Formation of One-Dimensional InAs Quantum-Dot-Chains on Vicinal GaAs(001) Substrates h, International Symposium on Quantum Dots and Photonic Crystals 2003 (QDPC2003), (Nov. 17-18, 2003) Tokyo, P-2 p.22.

  99. K. Yoshimoto, S. Konoshita, Y. Sugimoto, M. Abe, S. Morita, T. Kaizu, K. Yamaguchi, K. Matsuda, T. Saiki and D. Fujita :g Kelvin Probe Force Microscopy Measurement of InAs Quantum Dots h, The 1st Int. Symposium on Active Nano-Characterization and Technology (ANCT-2003), (Nov. 12-14, 2003) Tsukuba, P-53.

  100. D. Murahara, Y. Kobayashi and K. Yamaguchi :g Observation of Spin-dependent Tunnel Conductance by Spin-polarized Scanning Tunneling Microscopy Using Ni tips h, The 16th Int. Microprocesses and Nanotechnology Conference (MNC-2003), (Oct. 28-31, 2003) Tokyo, 30P-7-32, pp.232-233.

  101. K. Yamaguchi, T. Kaizu, T. Kanto and Y. Suzuki :g(Invited) Self-Formation of InAs Quantum Nanostructures - Uniform Quantum Dots, Quantum-Dot Chains and Nanoholes - g, The 8th IUMRS Int. Conference on Advanced Materials 2003 (IUMRS-ICAM 2003), (Oct. 8-13, 2003) Yokohama, A1-12-O18, p.6.

  102. S. Iwasaki, T. Nakai and K. Yamaguchi :g Self-Assembled GaAs/GaSb Quantum Dots by Molecular Beam Epitaxy g, The 8th IUMRS Int. Conference on Advanced Materials 2003 (IUMRS-ICAM 2003), (Oct. 8-13, 2003) Yokohama, A1-12-P06, p.7.

  103. T. Nakai, S. Iwasaki and K. Yamaguchi :gControl of GaSb/GaAs Nanostructures by Molecular Beam Epitaxy g, 2003 Int. Conference on Solid State Devices and Materials (SSDM-2003), (Sep. 16-18, 2003) Tokyo, P8-6, pp.608-609.

  104. A. Takeuchi, R. Ohtsubo, M. Murayama, T. Kitamura, T. Kuroda, Y. Nakata, N. Yokoyama and K. Yamaguchi : g Observation of Spin Relaxation, Tunneling, Anti-Ferromagnetic Coupling and Spin-Pauli-Blocking in Quantum Dots h, The 2nd Int. Conference and School on Spintronics and Quantum Information Technology (SPINTECH II), (Aug. 4-8, 2003) Brugge Belgium

  105. Y. Suzuki, T. Kaizu and K. Yamaguchi :g Controlled Stacking Growth of Uniform InAs Quantum Dots by Molecular Beam Epitaxy h, The 11th Int. Conference on Modulated Semiconductor Structures (MSS-11), (Jul. 14-18, 2003) Nara, B5, pp.163-164.

  106. T. Kaizu and K. Yamaguchi :g Facet Formation of Uniform InAs Quantum Dots by Molecular Beam Epitaxy h, The 15th Int. Microprocesses and Nanotechnology Conference (MNC-2002), (Nov. 6-8, 2002) Tokyo.

  107. K. Yamaguchi :g(Invited) Self Formation of Uniform Quantum Dots and One-Dimensional Quantum-Dot Chains g, Int. Symposium on Nano-Intelligent Materials/System (ISNIMS), (Oct. 30, 2002) Tokyo, proceedings pp.17-22.

  108. S. Iwasaki and K. Yamaguchi, : h Shape Transition of InAs from 2-Dimensional Islands to 3-Dimensional Dots by Annealing g, The 4th Int. Symposium on Control of Semiconductor Interfaces (ISCSI-4), (Oct.21-25, 2002) Karuizawa, B2-2.

  109. M. Murayama, R. Ohtsubo, T. Kitamura, T. Kuroda, K. Yamaguchi and A. Takeuchi :g Observation of Spin Pauli Blocking in InAs High-Uniform Quantum Dots g, The 2nd Int. Conference on Semiconductor Quantum Dots (QD-2002), (Sep. 30 - Oct. 3, 2002), Tokyo, M-9, p.143.

  110. T. Kitamura, R. Ohtsubo, M. Murayama, T.Kuroda, K. Yamaguchi and A. Takeuchi :g Direct Observation of Phonon Relaxation Bottleneck in InAs High-Uniform Quantum Dots g, The 2nd Int. Conf. on Semiconductor Quantum Dots (QD-2002), (Sep. 30 - Oct. 3, 2002), Tokyo, M-13, p.147.

  111. T. Kanto and K. Yamaguchi :g Fabrication of One-Dimensional InAs Quantum-Dot Chains on GaAs/InGaAs Strained Buffer Layer by Molecular Beam Epitaxy g, The 2nd Int. Conference on Semiconductor Quantum Dots (QD-2002), (Sep. 30 - Oct. 3, 2002), Tokyo, D-2, p.24.

  112. K. Yamaguchi, T. Kaizu, R. Ohtsubo and S. Iwasaki :g(Invited) Self Size-Limiting Growth of Uniform InAs Quantum Dots by Molecular Beam Epitaxyg, 2002 Int. Conference on Solid State Devices and Materials (SSDM-2002), (Sep. 17-19, 2002) Nagoya, F-7-1, pp.806-807.

  113. R. Ohtsubo and K. Yamaguchi :g High Quality InAs Quantum Dots Covered by InGaAs/GaAs Hetero-Capping Layer h, The 6th Int. Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (EXMATEC-2002), (May 26-27, 2002) Budapest.

  114. T. Kawagoe, Y. Suzuki, E. Tamura, K. Yamaguchi, and K. Koike :g Observation of Spin-polarized Electrons Using STM-differential Conductivity and Photo-assisted Tunneling Measurementsg, 2001 JRCAT Symposium on Atom Technology (Dec.11, 2001) Tokyo, [Extended Abstracts, pp.287-290].

  115. T. Miura and K. Yamaguchi :g Spin-Polarized Scanning Tunneling Microscopy Using Optically Pumped GaAs Tips g, The 14th Int. Microprocesses and Nanotechnology Conference (Oct.31-Nov.2, 2001) Matsue, [Digest of Papers 1D-6-15, pp.160-161].

  116. Y. Saito, R. Otsubo and K. Yamaguchi :g Size Ordering Effects of InAs Quantum Dots During a GaAs Capping Growth g, The 28th Int. Symposium on Compound Semiconductors (Oct.1-4, 2001) Tokyo [Abstract: WeP-16, p.156]. Inst.Phys.Conf.Ser.(2002) No.170,Chap.7,531.

  117. K. Yamaguchi, T. Kaizu, K. Yujobo and Y. Saito: g Uniform Formation Process of Self-Organized InAs Quantum Dots g, The 13th Int. Conference on Crystal Growth / 11th Int. Conference on Vapor Growth and Epitaxy (Jul.30-Aug.4, 2001) Kyoto [Abstracts: 01p-S11-05, p.231].

  118. K. Yamaguchi, Y. Saito and R. Otsubo:g Size-Shrinkage Effects of InAs Quantum Dots During the Growth of GaAs Capping Layer g, The 8th Int. Conference on the Formation of Semiconductor Interface (Jun.10-15, 2001) Sapporo. [Abstracts: TuP-15, pp.90-91.]

  119. T. Kaizu and K. Yamaguchi : g (Invited) Narrow Size Distribution of Facet-Formed InAs Quantum Dots g, 6th Int. Symposium on Advanced Physical Fields, Fabrication of Nanostructures (Mar.6-9, 2001) Tsukuba [Proceedings, pp.242-247 and Abstracts, P-2].

  120. Y. Suzuki, T. Manago, R. Shinohara, K. Yamaguchi, T. Kawagoe, H. Akinaga, T. Kuroda, F. Minami and S. Yuasa :g Photo-Excitation Spectra in Spin-Polarized STM Using Optically Pumped GaAs Tips g, 2000 JRCAT Int. Symposium on Atom Technology (Nov.7, 2000) Tokyo.

  121. K. Yamaguchi, R. Shinohara, H. Hirota, T. Miura and M. Hashimoto :g Application of Micro-Fabricated GaAs Tip to Spin-Polarized Scanning Tunneling Microscope g, Int. Workshop on Polarized Electron Source and Polarimeter 2000 (Oct.12-14, 2000) Nagoya.

  122. Y. Suzuki, T. Manago, H. Akinaga, T. Kawagoe, R. Shinohara, K. Yamaguchi, E. Tamura and S. Yuasa : g Photo-Assisted Electron Tunneling from GaAs to Ferromagnets in Micro-Fabricated Junctions and Spin-Polarized STMh, Int. Symposium on Surface and Interface: Properties of Different Symmetry Crossing-2000 (Oct.17-20, 2000) Nagoya.

  123. K. Yamaguchi and T. Kaizu :g Self Size Limit of InAs Quantum Dots Grown by Molecular Beam Epitaxy g, The 3rd Int. Symposium on Formation, Physics and Device Application of Quantum Dot Structures (Sep. 10-14, 2000) Sapporo, [proceedings: pp.1885-1887, abstract: Tu1-10, p.88.]

  124. R. Shinohara, K. Yamaguchi, H. Hirota, Y. Suzuki, T. Manago, H. Akinaga, T. Kuroda and F. Minami: g Lifetime and Spin Relaxation Time Measurements of Micro-fabricated GaAs Tipsh, The 13th Int. Microprocesses and Nanotechnology Conference (Jul.11-13, 2000) Tokyo, [Digest of Papers, 12C-6-7, pp.170-171].

  125. K. Yamaguchi and K. Kawaguchi :g Self-Organized Quantum Dot Chains of InAs Grown by Molecular Beam Epitaxy g, The 10th Int. Conference on Solid Films and Surfaces (Jul.9-13, 2000) Princeton, We-P-104.

  126. Y. Suzuki, W. Nabhan, R. Shinohara, K. Yamaguchi, T. Kawagoe, K. Shigeto, T. Manago, H. Akinaga, T. Kuroda, F. Minami and S. Yuasa:g Spin-Polarized STM Using Optically Pumped GaAs Tipsh, Int. Symposium on Spin-Electronics (Jul. 3-6, 2000) Germany.

  127. Y. Suzuki, W. Nabhan, R. Shinohara, K. Yamaguchi, T. Kawagoe, K. Shigeto, T. Manago, H. Akinaga, T. Kuroda, F. Minami and S. Yuasa:g Possible Parasitic Signals in the Spin-Polarized STM Using Optically Pumped GaAs Tipsh, Int. Symposium on Nanoscale Magnetism and Transport (March 8-10, 2000) Sendai.

  128. T. Kawagoe, Y. Suzuki, R. Shinohara, K. Yamaguchi, T. Sato and E. Tamura :g Progress Toward Spin-Polarized STM Using Ferromagnetic and Semiconductor Tips g, '99 JRCAT Int. Symposium on Atom Technology (Nov.25, 1999) Tokyo, [Extended Abstracts, pp.311-314].

  129. R. Shinohara and K. Yamaguchi :g Observation of Spin-Dependent Tunneling Current Using Optically Pumped GaAs Microtip g, The 12th Int. Microprocesses and Nanotechnology Conference (Jul.6-8, 1999) Yokohama, [Digest of Papers, 7C-6-17, pp.128-129].

  130. K. Yamaguchi, T. Hiraike and K. Kawaguchi :g One-Dimensional Alignment of InAs Quantum Dots on Strain-Controlled InGaAs Layers by Selective-Area Molecular Beam Epitaxy g, The 5th Int. Conference on Atomically Controlled Surfaces, Interface and Nanostructures (Jul.6-9, 1999) Aix-en Provence, TH.A 14.50 O.

  131. Y. Suzuki, W. Nabhan, K. Yamaguchi, R. Shinohara and T. Katayama :g Spin-Sensitive Scanning Tunneling Microscope Using GaAs Optically Pumped Tips g, Int. Symposium on EMRS, 1998

  132. Y. Suzuki, R. Shinohara, W. Nabhan, K. Yamaguchi and T. Sato :g A Trial of Spin-Sensitive STM Using Micro-Fabricated GaAs Tips g, '98 JRCAT Int. Symposium on Atom Technology (Nov.25, 1998) Tokyo [Abstracts, P48]

  133. Y. Suzuki, W. Nabhan, R. Shinohara and K. Yamaguchi :g Observation of Co Ultrathin Films Using Scanning Tunneling Microscope Equipped with GaAs Photo-excited Tips g, Int. Symposium on Surface and Interface: Properties of Different Symmetry Crossing (Nov.19-21, 1998) Tokyo [Extended Abstracts, P48]

  134. K. Yamaguchi, R. Shinohara and M. Hashimoto :g (Invited) Spin-Polarized Scanning Tunneling Microscope Using Optically Pumped GaAs Microtip g, Int. Workshop on Physics and Technology of Nanostructured, Multicomponent Materials (Sep.24-26, 1998) Ukraine [Abstracts, p.16].

  135. W. Nabhan, Y. Suzuki, R. Shinohara and K. Yamaguchi :g Effect of Dichroism in the GaAs Tip-Based Spin-Polarized STM g, The 14th Int. Vacuum Congress and 10th Int. Conference on Solid Surfaces (Aug.31-Sep.4, 1998) Birmingham.

  136. K. Yamaguchi, R. Shinohara, Y. Suzuki and W. Nabhan :g Fabrication of GaAs Microtips and Its Application to Spin-Polarized Scanning Tunneling Microscope g, The 11th Int. Microprocesses and Nanotechnology Conference(Jul.13-16, 1998) Korea [Digest of Papers, 16A-7-5, pp.285-286].

  137. Y. Suzuki, W. Nabhan, K. Yamaguchi and T. Katayama :g (Invited) Spin-Sensitive Scanning Tunneling Microscope Using GaAs Optically Pumped Tips g, The 3rd Int. Symposium on Metallic Multilayers (Jun.14-19, 1998) Vancouver.

  138. K. Yamaguchi, T. Hiraike and F. Hiwatashi :g Selective Self-Organization of InAs Quantum Dots on InGaAs/GaAs Buffer Layers g, The 3rd Int. Symposium on Advanced Physical Fields, Fabrication of Nanostructures (Feb.18-20, 1998) Tsukuba [Proceedings, pp.242-247 and Abstracts, P-2].

  139. F. Hiwatashi and K. Yamaguchi :g Selective Growth of Self-Organizing InAs Quantum Dots on Strained InGaAs Surfaces g, The 4th Int. Symposium on Atomically Controlled of Surfaces and Interfaces (Oct.27-30, 1997) Tokyo [Abstracts, PC44, pp.294-295].

  140. K. Yamaguchi, T. Okada and F. Hiwatashi :g Analysis of Indium Surface Segregation in Molecular Beam Epitaxy of InGaAs/GaAs Quantum Wells g, The 2nd Int. Symposium on Control of Semiconductor Interfaces (Oct.28-Nov.1, 1996) Karuizawa [Abstracts, P5-5, p.81].

  141. K. Yamaguchi :g Self-Limited Stripe Width in the Selective Metalorganic Chemical Vapor Deposition Growth of GaAs g, The 24th State-of-the-Art Program on Compound Semiconductors, The 189th Meeting of the Electrochemical Society (May 5-10, 1996) Los Angeles [Proceedings, Vol.96-2, pp.253-261].