RDControl of Semiconductor Heterointerfaces
@Precise control of semiconductor heterointerfaces is one of important technologies for the fabrication of
quantum devices. In Yamaguchi lab., the growth mechanism of semiconductor heterostructures is studied in order to
obtain abrupt heterointerfaces and design interface structures. In particular, changes of the QD size and shape
during the embedding growth are analyzed in detail.
Related Papers:
T.Nakai and K.Yamaguchi : g Analysis of Sb-As Surface Exchange Reaction in Molecular Beam Epitaxy of GaSb/GaAs Quantum Wells h, Jpn. J. Appl. Phys., Vol.44, No.6A (2005) pp.3803-3807.
Y.Kobayashi and K.Yamaguchi : g Control of Photoluminescence Wavelength from Uniform InAs Qunatum Dots by Annealing g, Appl. Surf. Sci., Vol.244 (2005) pp.88-91.
T.Miura, T.Nakai and K.Yamaguchi : g Atomically controlled GaSb-termination of GaAs surface and its properties g, Appl. Surf. Sci., Vol.237 (2004) pp.242-245.
S.Iwasaki and K.Yamaguchi : g Shape Transition of InAs from 2-Dimensional Islands and 3-Dimensional Dots by Annealing h, Appl. Surf. Sci., Vol.216 (2003) pp.407-412.
R.Ohtsubo and K.Yamaguchi : g High Quality InAs Quantum Dots Covered by InGaAs/GaAs Hetero-Capping Layer h, Phys. Status Sol. (c) Vol.0, No.3 (2003) pp.939-943.
K.Yamaguchi, Y.Saito and R.Otsubo: g Size-Shrinkage Effects of InAs Quantum Dots During the Growth of GaAs Capping Layer g, Appl. Surf. Sci., Vol.190 (2002) pp.212-217.
K.Yamaguchi, Y.Yasuda, A.Kovacs and P.B.Barna : g Anisotropic Surface Segregation of Indium Atoms in Molecular Beam Epitaxy of InGaAs/GaAs Quantum Wells g, J. Appl. Phys., Vol.89, No.1 (2001) pp.217-220.
K.Yamaguchi, T.Okada and F.Hiwatashi Fg Analysis of Indium Surface Segregation in Molecular Beam Epitaxy of InGaAs/GaAs Quantum Wells g, Appl. Surf. Sci., Vol.117-118 (1997) pp.700-704.
