QDSelf-Formation of Quantum Dot Array
@A precise control of the quantum dot (QD) position and a selective arrangement of QDs are needed for some
device applications. Lithography and etching techniques are often used for a selective fabrication of QDs on
non-planar substrates. We have been investigating the self-alignment of InAs QD array on a strained buffer
layer without lithography and etching processes. Recently, one-dimensional array of InAs QDs (QD chains) were
successfully formed on self-formed GaAs mesa-stripes, grown on the strained InGaAs/GaAs buffer layer.
Additionally, we have been attempting two-dimensional QD array using the strained GaAsSb/GaAs buffer layers.
Related Papers:
K.Yamaguchi, T.Kaizu, T.Kanto and Y.Suzuki : g Self-Formation of Uniform InAs Quantum Dots and Quantum-Dot Chains g, Trans. MRS-J, Vol.29, No.1 (2004) 117-121.
K.Yamaguchi, K.Kawaguchi and Toru Kanto: g One-Dimensional Quantum-Dot Chains of InAs Grown on Strain-Controlled GaAs/InGaAs Buffer Layer by Molecular Beam Epitaxy h, Jpn. J. Appl. Phys., Vol.41, No.9AB (2002) pp.L996 - L998.
K.Yamaguchi, T.Hiraike and K.Kawaguchi : g One-Dimensional Alignment of InAs Dots on Strain- Controlled InGaAs Layers by Selective-Area Molecular-Beam Epitaxy g, Appl. Surf. Sci., Vol.162- 163 (2000) pp.590-594.
K.Yamaguchi, T.Hiraike and F.Hiwatashi : g Selective Self-Organization of InAs Islands on InGaAs/GaAs Buffer Layers g, J. Surf. Analysis, Vol.4, No.2 (1998) pp.242-247.
F.Hiwatashi and K.Yamaguchi : g Selective Growth of Self-Organizing InAs Quantum Dots on Strained InGaAs Surfaces g, Appl. Surf. Sci., Vol.130-132 (1998) pp.737-741.
K.Yamaguchi, E.Waki and H.Hasegawa Fg Selective Self-Formation of InAs Quantum Dots on Strained InGaAs Layers by Molecular Beam Epitaxy g, Jpn. J. Appl. Phys., Vol.36, No.7A (1997) pp.L871-L873.